Samsung Electronics Co., Ltd.

Byungjo Kim

Sanghoon Lee

Jungmin Ko

Seungbo Shim

Sunghyup Kim

Sangki Nam

Jonggu Lee

Sukwon Lee

Kwonsang Seo

Sebin Choi

Younghyun Jo

An upper electrode used for a substrate processing apparatus using plasma is provided. The upper electrode includes a bottom surface including a center region and an edge region having a ring shape and surrounding the center region, a first protrusion portion protruding toward plasma from the edge region and having a ring shape, wherein the first protrusion portion includes a first apex corresponding to a radial local maximum point toward the plasma, and a first distance, which is a radial-direction distance between the first apex and a center axis of the upper electrode, is greater than a radius of a substrate.

Upper electrode and substrate processing apparatus including the same

A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Method of manufacturing a semiconductor package

Bonding head including a thermal compensator, die bonding apparatus including the same and method of manufacturing semiconductor package using the same

Growing community of inventors

Seoul, South Korea

Byungjo Kim