Samsung Electronics Co., Ltd.

Byungjae Park

Hagju Cho

Heonjong Shin

Sangjine Park

Yongsun Ko

Jeongnam Han

Myeongcheol Kim

Kyounghwan Yeo

A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.

Semiconductor devices having spacer protection pattern

A semiconductor device including a fin active region protruding from a substrate and an isolation region defining the fin active region, a gate pattern intersecting the fin active region and the isolation region, and gate spacer formed on a side surface of the gate pattern and extending onto a surface of the isolation region is provided.

Semiconductor devices having a spacer on an isolation region

A semiconductor device includes a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate. A gate electrode crosses the multi-fin active region. Source/drain regions are disposed on the sub-fins except a first sub-fin and a last sub-fin. A contact plug is disposed on the source/drain regions.

Semiconductor device having an inactive-fin

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Seongnam-si, South Korea

Byungjae Park