Applied Materials, Inc.

Byunghoon Yoon

Seshadri Ganguli

Sang Ho Yu

Xi Cen

Joung Joo Lee

Liqi Wu

Wei Lei

Siddarth A Krishnan

Paul F Ma

Avgerinos V Gelatos

Kai Wu

Zhibo Yuan

Thomas Anthony Empante

Wei Min Chen

Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Gap fill methods using catalyzed deposition

Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate may be pre-cleaned. A ruthenium silicide (RuSi) layer is selectively deposited on the p transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. An optional barrier layer may be formed on the titanium silicide (TiSi) layer. The method may be performed in a processing chamber without breaking vacuum.

Dual silicide process using ruthenium silicide

Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

Catalyzed deposition of metal films

Methods of depositing a metal film with high purity are discussed. A catalyst enhanced CVD process is utilized comprising an alkyl halide catalyst soak and a precursor exposure. The precursor comprises a metal precursor having the general formula (I): M-L(L), wherein M is a metal, Lis an aromatic ligand, Lis an aliphatic ligand, and y is a number in the range of from 2 to 8 to form a metal film on the substrate surface, wherein the Lcomprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene. Selective deposition of a metal film with high purity on a metal surface over a dielectric surface is described.

Catalyst enhanced seamless ruthenium gap fill

Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

Selective deposition of titanium films

Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a hydrazine derivative to form a metal containing film are described.

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Cupertino, CA, United States of America

Byunghoon Yoon