Stats Chippac Pte. Ltd.

ByungHoon Ahn

Gwang Kim

YongTaek Lee

HyunTai Kim

Kai Liu

A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

Semiconductor device and method of forming RF FEM with LC filter and IPD filter over substrate

A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.

Semiconductor device and method of forming RF FEM and RF transceiver in semiconductor package

A semiconductor device is made by forming an oxide layer over a substrate and forming a first conductive layer over the oxide layer. The first conductive layer is connected to ground. A second conductive layer is formed over the first conductive layer as a plurality of segments. A third conductive layer is formed over the second conductive layer as a plurality of segments. If the conductive layers are electrically isolated, then a conductive via is formed through these layers. A first segment of the third conductive layer operates as a first passive circuit element. A second segment operates as a second passive circuit element. A third segment is connected to ground and operates as a shield disposed between the first and second segments. The shield has a height at least equal to a height of the passive circuit elements to block cross-talk between the passive circuit elements.

Semiconductor device with cross-talk isolation using M-cap

A semiconductor wafer has an insulating layer over a first surface of the substrate. An IPD structure is formed over the insulating layer. The IPD structure includes a MIM capacitor and inductor. A conductive via is formed through a portion of the IPD structure and partially through the substrate. The conductive via can be formed in first and second portions. The first portion is formed partially through the substrate and second portion is formed through a portion of the IPD structure. A first via is formed through a second surface of the substrate to the conductive via. A shielding layer is formed over the second surface of the substrate wafer. The shielding layer extends into the first via to the conductive via. The shielding layer is electrically connected through the conductive via to an external ground point. The semiconductor wafer is singulated through the conductive via.

Growing community of inventors

Kyungki-do, South Korea

ByungHoon Ahn