Samsung Electronics Co., Ltd.

Byungho Chun

Jaebeom Park

Jiye Kim

Woongpil Jeon

Daihong Kim

Won-Seok Jung

Jiwoon Im

Jongmyeong Lee

Kyung-Tae Jang

Tae-Jong Han

Kwangchul Park

Jongwan Choi

Jiyoun Seo

In Cheol Song

In Cheol Cheol Song

An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.

Apparatus for and method of manufacturing semiconductor device

A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlayer dielectric covering the first interlayer dielectric. The stacked structure includes a stepwise shape. The first interlayer dielectric includes at least one step portion having a slope surface connecting a first top surface to a second top surface. The first top surface and the sloped surface define a first angle that is an obtuse angle. A level of the second top surface is higher than a level of the first top surface.

Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILD

Growing community of inventors

Seongnam-si, South Korea

Byungho Chun