Samsung Electronics Co., Ltd.

Byungchul Ko

Jonghwan Kim

Daekyoung Kim

Ranhee Lee

Taewoong Ha

Disclosed is an operation method of a storage device, which includes a plurality of data processing engines includes setting a first region among a plurality of regions of a host memory buffer allocated from an external host with a first data processing policy and setting a second region among the plurality of regions with a second data processing policy, performing an encoding operation on data to be stored in the first region, based on a first data processing engine corresponding to the first data processing policy, performing an encoding operation on data to be stored in the second region, based on a second data processing engine corresponding to the second data processing policy, and changing the first data processing policy of the first region to a third data processing policy based on a changed characteristic of the first region.

Storage device and operation method which includes a plurality of data processing engines and data processing policies

A storage device and an operation method of a storage device is provided. An operation method of a storage device includes: detecting an abnormal operation of a host memory buffer (HMB) positioned outside a storage device during data processing; and when the abnormal operation is detected, updating, by the storage device, a security policy applied when writing data to or reading data from the HMB.

Storage device and operation method thereof

A memory system including a plurality of dynamic random access memory (DRAM) devices and a DRAM controller is provided. The plurality of DRAM devices includes one or more DRAM groups. Each of the one or more DRAM groups includes at least two DRAM devices. The DRAM controller outputs a clock enable signal, and controls a selection signal used to select a target DRAM device that operates in a normal mode in response to the clock enable signal. At least one target DRAM device is selected from the one or more DRAM groups. One or more stand-by DRAM devices other than the at least one target DRAM device operates in a self-refresh mode.

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Hwaseong-si, South Korea

Byungchul Ko