Oci Company Ltd.

Byungchang Kang

Changwon Jeong

Seungan Chyun

Byunghyun Park

Gabok Kim

Junki Jeon

A method of preparing a high-purity silicon carbide (SiC) crystal, and more specifically, to a method of preparing high-purity SiC having an extremely low impurity content in an excellent yield and in large quantities. The method including preparing a reactor containing a reaction chamber; heating the conductive heating element in the reaction chamber; mixing a silicon precursor, a carbon precursor, and a carrier gas; injecting the mixed gas into the reaction chamber, depositing SiC on the conductive heating element and harvesting the deposited SiC crystals.

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Seongnam-si, South Korea

Byungchang Kang