Samsung Electronics Co., Ltd.

Byung-yoon Kim

Young-woo Park

Won-seong Lee

Min-Chul Kim

Hyuck-Jin Kang

Tai-heui Cho

Je-min Park

Semiconductor devices are provided including a semiconductor substrate and a first interlayer insulating layer on the semiconductor substrate. A contact pad is provided in the first interlayer insulating layer and a second insulating layer is provided on the first interlayer insulating layer. A contact hole is provided in the second interlayer insulating layer. The contact hole exposes the contact pad and a lower portion of the contact hole has a protrusion exposing the contact pad. The protrusion is provided on the second interlayer insulating layer. A contact spacer is provided on inside sidewalls of the contact hole and fills the protrusion. A contact plug is provided in the contact hole. Related methods are also provided herein.

Semiconductor devices having contact holes including protrusions exposing contact pads

A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of moisture through the sidewall of an exposed fuse opening portion, an etch stop layer is formed over a fuse line. A guard ring opening portion is formed using the etch stop layer. The guard ring opening portion is filled with a material for forming the uppermost wiring of multi-level interconnect wirings or the material of a passivation layer, thereby forming the guard ring concurrently with the uppermost interconnect wiring or the passivation layer. Accordingly, permeation of moisture through an interlayer insulating layer or the interface between interlayer insulating layers around the fuse opening portion can be efficiently prevented by a simple process. In addition, the etch stop layer is also formed under the fuse opening portion so that an insulating layer remaining on the fuse line can be controlled to have a predetermined thickness when forming the fuse opening portion, thereby improving the cutting efficiency of fuses.

Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area

A contact structure having silicide layers, a semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device are provided. The contact structure includes a first conductive region and a second conductive region on a substrate. An insulating layer covers the first and second conductive regions. A first contact hole and a second contact hole are formed through the insulating layer and expose the first and second conductive regions, respectively. A first silicide layer having a first thickness is on the first conductive region exposed by the first contact hole. A second silicide layer having a second thickness different than the first thickness is on the second conductive region exposed by the second contact hole.

Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device

A bonding pad structure in an integrated circuit (IC) and a method for manufacturing thereof comprises a plurality of dummy patterns deposited in sub-layers of the IC, each dummy pattern being connected via a metal link to a plurality of complementary top surface bonding pads, wherein the dummy patterns and the metal link are constructed during the same process steps used to construct the circuit elements included in the IC, without additional or special process steps. Such an imbedded and anchored bonding pad provides contact reliability for both conductive and non-conductive pads used for the interconnection of integrated circuits in a manner that resists layer separation or de-lamination under pulling stresses that are present on the bonding pads.

Bonding pad structure of a semiconductor device

Semiconductor device capable of preventing moisture absorption of fuse area thereof and method for manufacturing the fuse area

Bonding pad structure of a semiconductor device and method for manufacturing the same

Semiconductor device capable of preventing moisture-absorption of fuse area thereof

A power source voltage tracking circuit, for providing a given voltage which is lower than power source voltage, containing a first node for applying a power source voltage, a second node and an output line, a load connected between the first node and the output line to precharge the output line with the given voltage, elements connected between said first node and said second node to charge the second node, and elements to discharges the output line charged with the given voltage in response to the charging voltage of the second node.

Growing community of inventors

Seoul, South Korea

Byung-yoon Kim