Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Byung Yeon Choi

Hee Young Beom

Hyun Seoung Ju

Sung Min Hwang

Yong Gyeong Lee

Gi Seok Hong

Chang Hyeong Lee

Ji Hwan Lee

June O Song

Sung Kyoon Kim

Chang Man Lim

Myeong Soo Kim

Tae Sung Lee

Se Yeon Jung

Ki Seok Kim

Gyu Hyeong Bak

Young Shin Kim

Yong Seon Song

So Yeong Oh

Ju Hyeon Oh

A semiconductor device according to an embodiment may include: a light emitting structure; a light transmitting electrode layer disposed on the light emitting structure; and a reflective layer disposed on the light transmitting electrode layer and including a plurality of first openings and a plurality of second openings. The semiconductor device according to the embodiment may include: a first electrode in contact with a first conductivity type semiconductor layer of the light emitting structure; and a second electrode in contact with the light transmitting electrode layer through the plurality of first openings. The first electrode may include a first sub-electrode and a plurality of first branch electrodes, wherein the plurality of first branch electrodes are arranged extending toward the second electrode from the first sub-electrode; the second electrode may include a second sub-electrode and a plurality of second branch electrodes, wherein the plurality of second branch electrodes are arranged extending toward the first electrode from the second sub-electrode; and the plurality of first branch electrodes and the plurality of second branch electrodes may be alternately disposed on an upper surface of the reflective layer.

Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess

A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening. The second bonding pad may be electrically connected to the second electrode through the second opening.

Semiconductor device and semiconductor device package

A semiconductor device according to the embodiment may include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer; a first bonding pad disposed on the light emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the light emitting structure and spaced apart from the first bonding pad, and electrically connected to the second conductivity type semiconductor layer; and a reflective layer disposed on the light emitting structure and disposed between the first bonding pad and the second bonding pad. According to the semiconductor device of the embodiment, each of the first bonding pad and the second bonding pad includes a porous metal layer having a plurality of pores and a bonding alloy layer disposed on the porous metal layer.

The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

Light emitting device and light emitting device package

A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

Light emitting device

Disclosed is a light emitting device comprising a plurality of light emitting cells, and a bridge electrode electrically connecting two adjacent light emitting cells, and the plurality of light emitting cells comprise a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode on the first conductive semiconductor layer and a second electrode on the second conductive semiconductor layer, wherein the bridge electrode has a part thicker than the first electrode and the second electrode.

A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Light emitting device and light emitting device array

A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by and a position separated from the first side surface of the light emitting structure by 

Light emitting device having current blocking layer

A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by &#x2155; W and a position separated from the first side surface of the light emitting structure by &#xbd; W.

Growing community of inventors

Seoul, South Korea

Byung Yeon Choi