Samsung Electronics Co., Ltd.

Byung-wook Yoo

Sang-Yoon Lee

Myung-Kwan Ryu

Kyung-bae Park

Tae-sang Kim

Jang-yeon Kwon

Ji-sim Jung

Kyung-Seok Son

Chae-Man Lim

Tae-wan Kim

Ji-Sim Jung

Kyung-Bae Park

Jang-Yeon Kwon

Do-hwan Kim

Jeong-il Park

Tae-Sang Kim

Bang-lin Lee

Eun-jeong Jeong

Kyoung-Seok Son

A foldable computing apparatus includes a display unit having a touch screen, a first body rotatably disposed in an end of the display unit, and a second body rotatably disposed in an end of the first body opposite to the display unit, the second body having a keyboard. The first body is rotated so that a rear surface of the display unit and a rear surface of the first body are close to each other, and then the second body is rotated with respect to the first body so as to support the display unit.

Foldable computing apparatus and method of erecting display unit

A power amplifying apparatus and a method for effectively controlling a bias voltage of a power amplifier are provided. An electronic device includes a baseband signal processor configured to convert a baseband signal to an envelope signal, a power amplifier configured to amplify a Radio Frequency (RF) signal based on the baseband signal, a power modulator configured to modulate an input voltage to a bias voltage of the power amplifier based on the envelope signal, and a power controller configured to control an operation of the power modulator according to a characteristic of the baseband signal.

Apparatus and method for power amplification

Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure

An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga&#x2014;In&#x2014;Zn Oxide, In&#x2014;Zn Oxide, In&#x2014;Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga&#x2014;In&#x2014;Zn Oxide, In&#x2014;Zn Oxide and In&#x2014;Sn Oxide.

Oxide semiconductor transistor and method of manufacturing the same

Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Poly-Si thin film transistor and method of manufacturing the same

A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Thin film transistor and method of manufacturing the same

Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

Growing community of inventors

Yongin-si, South Korea

Byung-wook Yoo