Samsung Electronics Co., Ltd.

Byung-Sup Shim

Yong-Tae Kim

Jeong-Uk Han

Tea-Kwang Yu

Yong-kyu Lee

Bo-young Seo

Yong-sik Jeong

Weon-ho Park

A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.

Semiconductor device and method of fabricating semiconductor device

Provided is a method of forming an isolation structure of a semiconductor device capable of minimizing the number of performing a patterning process and having trenches of various depths. The method includes partially etching the semiconductor substrate using a first patterning process to form first trenches and second trenches having a first depth. The semiconductor substrate has first to third regions. The first trenches are formed in the first region, and the second trenched are formed in the second region. The semiconductor substrate is partially etched using a second patterning process, so that third trenches are formed in the third region, and fourth trenches are formed in the second region. The fourth trenches extend from bottoms of the second trenches. The third trenches have a second depth, and the fourth trenches have a third depth. An isolation layer filling the first to fourth trenches is formed.

Method of forming isolation structure of semiconductor device

Growing community of inventors

Yongin-si, South Korea

Byung-Sup Shim