Samsung Electronics Co., Ltd.

Byung-Suo Shim

Tea-Kwang Yu

Yong-kyu Lee

Ji-Hoon Park

Bo-young Seo

Provided is a semiconductor device. The semiconductor device includes a lower active region on a semiconductor substrate. A plurality of upper active regions protruding from a top surface of the lower active region and having a narrower width than the lower active region are provided. A lower isolation region surrounding a sidewall of the lower active region is provided. An upper isolation region formed on the lower isolation region, surrounding sidewalls of the upper active regions, and having a narrower width than the lower isolation region is provided. A first impurity region formed in the lower active region and extending into the upper active regions is provided. Second impurity regions formed in the upper active regions and constituting a diode together with the first impurity region are provided. A method of fabricating the same is provided as well.

Growing community of inventors

Yongin-si, South Korea

Byung-Suo Shim