Samsung Electronics Co., Ltd.

Sungkyunkwan University

Byung Sung Kim

Eun Kyung Lee

Yubo Qian

Tae Sung Kim

Jin Sung Kim

Ho Sam Choi

Sung Su Kim

Chan Woo Park

Byoung Lyong Choi

Doo Suk Kang

Bo Kun Choi

Seung H Yoo

Jong Mu Choi

Chul Hong Park

Jun Hak Lim

Sun Key Lee

Min Ho Kang

Jin Hong Jeong

Myoung Ji Nam

Young Gook Park

Hyeon Uk Kim

Dongmok Whang

Eun Ji Kim

In Wook Oh

Sung Keun Park

Jin Hyun Park

Joong Sam Yun

Jin Il Kim

Tae Ho Kang

Tae Yong Kim

Won Tae Chae

Cheng Lin Cui

Ye Ji Yoon

Dongmock Whang

A method of generating a layout and manufacturing a semiconductor device, including receiving a design layout of a semiconductor device including active fins; extracting a design rule of the active fins from the design layout; forming fin lines overlapping the active fins such that the fin lines have a length that is greater than a length of the active fins, wherein the fin lines continuously extend from a position adjacent to one edge of a layout region of the semiconductor device toward another edge, and are formed in an entirety of the layout region of the semiconductor device; forming a mandrel pattern layout in an entirety of the layout region of the semiconductor device, using the fin lines; and forming a cut pattern layout in the entirety of the layout region of the semiconductor device, using the active fins.

Method of generating layout and method of manufacturing semiconductor devices using same

A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.

Semiconductor devices

Provided is a waveguide feeder. The waveguide feeder includes: a probe aligned at a center of a waveguide aperture at a metal wiring layer of a semiconductor substrate to input and output an electric signal; and an open stub located at a contact surface of a waveguide flange on a ground surface of a semiconductor chip in order to form a ground path of the probe on a surface of the waveguide flange.

On-chip waveguide feeder for millimeter wave ICS and feeding methods, and multiple input and output millimeter wave transceiver system using same

A method for outputting data by using a proximity sensor in a mobile device is provided. The method includes emitting light in a proximity sensing mode and detecting light reflected by a gesture, processing a signal of the detected light, comparing the processed signal with a preset value, providing comparison data based on the compared signal with the preset value, and outputting data converted based on a result of analyzing the comparison data.

Mobile device having proximity sensor and data output method using the same

Disclosed are a portable terminal with a music performance function and a method for playing a variety of musical instruments. The method includes: selecting a particular piece of music and a particular musical instrument from the portable terminal, according to a user request, and executing a music performance mode corresponding to the selected musical instrument; detecting a first input signal input to a screen according to the selected musical instrument in the musical performance mode; determining, if the first input signal is detected, whether a second input signal for executing audio source data is detected; analyzing the first and second input signals, in association with each other; and outputting audio source data of the selected music, according to the analyzed result, via audio signals.

Portable terminal with music performance function and method for playing musical instruments using portable terminal

Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.

Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires

A differential amplifier circuit and a frequency mixer for improving linearity are disclosed. The disclosed differential amplifier circuit includes first and second loads, a first output terminal for the first load, a second output terminal for the second load, a differential amplifying stage including a differential stage for amplifying a voltage difference between a first input stage and a second input stage, and a biasing current source for biasing the differential stage, and a non-linearity filtering circuit for filtering a non-linear signal generated from the differential amplifying stage. The non-linearity filtering circuit includes a first cross circuit including a first transistor to connect the first and second output terminals, and a second cross circuit including a second transistor to connect the first and second output terminals. The differential amplifier circuit achieves an improvement in linearity, as compared to conventional differential amplifier circuits, by offsetting, at a load side, a non-linear component generated at an active element of the differential amplifier circuit, to output only a linear current component.

Differential amplifier circuit and frequency mixer for improving linearity

Growing community of inventors

Suwon-si, South Korea

Byung Sung Kim