Samsung Electronics Co., Ltd.

Other

Byung Sun Park

Sung Jin Park

Ji Woon Im

Hyun Seok Lim

Hyuk Ho Kwon

Yu Seon Kang

Ji Youn Seo

Dong Hyeop Ha

Byung Ho Chun

Tae Yong Eom

Hyung Sup Yoon

Chul Soon Park

Jin Hee Lee

Kwang Eui Pyun

Dae Hun Choi

A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.

Deposition apparatus including upper shower head and lower shower head

A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.

A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.

Method of fabricating compound semiconductor devices using lift-off of insulating film

Growing community of inventors

Suwon-si, South Korea

Byung Sun Park