Samsung Electronics Co., Ltd.

Byung-Suk Jung

Sangjin Hyun

Donghyun Roh

Subin Shin

Guyoung Cho

Seung-Jae Lee

Yu-Gyun Shin

Wandon Kim

Dae-Young Kwak

Jung-Chan Lee

Shinhye Kim

TaekSoo Jeon

Kyungbum Koo

Disclosed is a semiconductor device comprising a substrate, a plurality of active patterns that protrude from the substrate, a device isolation layer between the active patterns, and a passivation layer that covers a top surface of the device isolation layer and exposes upper portions of the active patterns. The device isolation layer includes a plurality of first isolation parts adjacent to facing sidewalls of the active patterns, and a second isolation part between the first isolation parts. A top surface of the second isolation part is located at a lower level than that of top surfaces of the first isolation parts.

Semiconductor device

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate with an active pattern, a gate electrode provided at the active pattern, and a gate capping structure disposed above the gate electrode. The gate capping structure may include two or more gate capping patterns with different properties from each other, and the use of the gate capping structure makes it possible to form contact plugs in a self-aligned manner and improve operational speed and characteristics of the semiconductor device.

Semiconductor device and method of fabricating the same

A method of fabricating a semiconductor device includes forming gate structures on PMOS and NMOS transistor regions of the semiconductor substrate, forming epitaxial blocking layers on source/drain regions of PMOS and NMOS transistor regions using a nitridation process, then selectively removing one of the epitaxial blocking layers, and using a SEG process to form an epitaxial layer on respective source/drain regions while shielding the other source/drain regions with a remaining epitaxial blocking layer.

Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process

Growing community of inventors

Seoul, South Korea

Byung-Suk Jung