Lg Chem, Ltd

Byung-Ro Kim

Jung-Won Kang

Min-Jin Ko

Myung-Sun Moon

Bum-Gyu Choi

Won-Jong Kwon

Dong-Seok Shin

Dae-Ho Kang

Gwi-Gwon Kang

Jae-Ho Cheong

Hye-Yeong Nam

Young-Duk Kim

Sang-Min Park

Minjin Ko

Myungsun Moon

Jaeho Cheong

Jeong-Man Son

Hye-Yeong Lg Chem Ltd Nam

Bum-Gyu 7-107 Lg Chemical Apartment Choi

Min-Jin 105-1406 Luckyhana Apartment Ko

The present invention relates to a composition for preparing an excellent protecting film with high strength, wear resistance, and excellent barrier property by low temperature hardening, a protecting film prepared therefrom, a substrate comprising the same, and a component or device comprising the same. The composition comprises an organosiloxane polymer a), a photobase generator b), and an organic solvent c).

At low temperature, fast hardening composition for preparing protecting film, protecting film prepared therefrom, and substrate comprising the same

The present invention relates to an organic silicate polymer prepared by mixing silane compound with organic solvent to prepare a first mixture, and hydrolyzing and condensing the first mixture by adding water and catalyst, the first mixture being selected from a group consisting of oxidized hydrosilane, cyclic siloxane, a second mixture of oxidized hydrosilane and silane or silane oligomer, and a third mixture of cyclic siloxane and silane or silane oligomer, a composition for forming an insulation film of semiconductor devices prepared by using the organic silicate polymer, a method for preparing an insulation film using the composition, and a semiconductor device comprising the insulation film.

Organic silicate polymer and insulation film comprising the same

The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same

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Daejeon, South Korea

Byung-Ro Kim