Up Chemical Co., Ltd.

Byung Kwan Kim

Jin Sik Kim

Jun Hwan Choi

Myeong Ho Kim

Sungwoo Ahn

Yun Gyeong Yi

Da Som Yu

Mi Hee Lee

A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.

Silicon precursor compound, silicon-containing film formation composition comprising same, and method for forming film by using silicon-containing film formation composition

The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same

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Pyeongtaek-si, South Korea

Byung Kwan Kim