Korea Institute of Science and Technology

Seoul National University

Byung Ki Cheong

Won Mok Kim

Taek Sung Lee

Kyeong Seok Lee

Jeung-hyun Jeong

Doo Seok Jeong

Su Youn Lee

Dae-Hwan Kang

In Ho Kim

Hyun Seok Lee

Ji Yeon Lee

Ji Won Choi

Ki-bum Kim

Jin Seok Kim

Ho Seong Jang

Suyoun Lee

Wook Seong Lee

Jung-hyeon Kim

Jung Ah Lim

In-Ho Kim

Yong Won Song

Hyun Jung Yi

Jooho Kim

Moon Kyo Chung

Wook Yeon Hwang

Soon Gwang Kim

The present invention relates to a non-invasive health indicator monitoring system including a sensing module, an electric power storage module, and a circuit module to collect health indicator information by contacting with a subject. In addition, the present invention also relates to a method for monitoring health indicator continuously by using the health indicator monitoring system.

Non-invasive health indicator monitoring system and using method thereof

A color image sensor is disclosed. In one aspect, the color image sensor includes: a photo-sensitive cell having a lower electrode, an upper electrode, and a chalcogenide material located between the lower electrode and the upper electrode; and an image sensing circuit for measuring the wavelength or intensity of incident light based on an electric characteristic value generated from the photo-sensitive cell.

Filterless color image sensor

Provided is a surface plasmon resonance sensor including: a part of delivering light by which a signal beam is incident to generate an evanescent field; and a part of exciting surface plasmon for exciting surface plasmons by the generated evanescent field and giving rise to a surface plasmon resonance, wherein a dielectric waveguide layer is inserted between metal layers of the part of exciting surface plasmon, and surface plasmon resonance properties are changed by an object to be analyzed.

High resolution surface plasmon resonance sensor and sensor system thereof

A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.

Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same

A super-resolution optical recording medium includes a reflective layer formed on a substrate, a recording layer for recording information thereon, a super-resolution layer made of a chalcogenide semiconductor material, and a first and a second dielectric layers laminated on upper and lower surfaces of the super-resolution layer. The recording layer is made of a material that has a decomposition temperature higher than an information reproduction temperature and does not form bubble recording marks during recording, and the super-resolution layer contains one or more elements selected from the group consisting of nitrogen, oxygen, carbon, and boron.

Optical recording medium having super-resolution structure for improvement of reproducing stability and noise characteristic in low frequency band

The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof

The present invention is related to a super-resolution composite material for a high density optical information recording medium which consists of a dielectric medium that is transparent at a laser wavelength in use and has a melting point higher than 800&deg; C., and metal particles that are dispersed in the dielectric medium and have low melting points of 150&tilde;450&deg; C. Super-resolution capability of the material is rendered by metal particles that undergo reversible phase changes between melt and crystalline states, accompanied by changes in optical properties. As the dielectric medium, at least one material is selected for use from the group of SiO , TiO , ZrO , HfO , Al O , ZnO, Y O , BeO, MgO, WO , V O , SiN, AlN, ZnS, CdS SiC, MgF, CaF , NaF, BaF , PbF , LiF, LaF , GaP. As the metal particles with low melting points and high boiling points, at least one material is selected for use from a group of Sn, Pb, Bi, Te, Zn Cd, Se, Tl and Po.

High density optical information recording medium

Growing community of inventors

Seoul, South Korea

Byung Ki Cheong