Samsung Electronics Co., Ltd.

Byung Keun Hwang

Younghun Sung

Youn Joung Cho

Hyun-ji Song

Eun Hyea Ko

Jeong Ho Mun

Jae Woon Kim

A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

Growing community of inventors

Seongnam-si, South Korea

Byung Keun Hwang