Samsung Electronics Co., Ltd.

Yonsei University

Byung-Jun Park

Yoo-Sang Hwang

Ji-Young Kim

Ki-Nam Kim

Yun-Hee Lee

Kyu-Hyun Lee

Jae-Hoon Kim

Dong-jun Lee

Jong-Ae Park

Dae-Sik Hong

Ki-Ho Cho

Seung-hun Shin

Jong-han Kim

Jong-Wan Jung

Joon-Mo Kwon

Yoo-sang Hwang

Chang-Soo Lim

Chang-Rok Moon

Ji-Hyung Kim

Gil-Sang Yoo

Won-Seok Heo

Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.

Methods of forming a through via structure

An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

Image sensor devices including electrically conductive reflectors

An apparatus of setting multi-channels in a network system includes a mobile station transmitting at least one piece of channel information on a request message, wherein the request message requests to set a connection identifier for a communication service; and a control station calculating a bandwidth according to number of channels using the request message received from the mobile station and setting the calculated bandwidth as a service bandwidth of the connection identifier. The control station such as an ACR supports multi-channels through one frame structure (i.e., a communication structure of a connection identifier) and thus radio resources (e.g., bandwidth) to be provided to the mobile station are reduced.

Apparatus and method of setting multi-channels in network system

An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

CMOS image sensors and related devices and fabrication methods

A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.

CMOS image sensor and manufacturing method thereof

Example embodiments provide a unit pixel, an image sensor containing unit pixels, and a method of fabricating unit pixels. The unit pixel may include a semiconductor substrate, photoelectric transducers formed within the semiconductor substrate, multi-layered wiring layers formed on a frontside of the semiconductor substrate, inner lenses formed on a backside of the semiconductor substrate corresponding to the photoelectric transducers, and microlenses formed above the inner lenses.

Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels

A channel estimation method in a Multiple Input Multiple Output (MIMO) mobile communication system having a plurality of transmission antennas and a plurality of reception antennas is provided. In a method of transmitting, by a transmitter, channel estimation signals for channel estimation at a receiver, the transmission antennas transmit the same channel estimation signals for a first frame transmission duration, and transmit predetermined channel estimation signals corresponding to the number of the transmission antennas for a second frame transmission duration.

Channel estimation method in a MIMO wireless communication system

A semiconductor device capable of preventing an electrical short between contacts and their adjacent contact pads and a method of manufacturing the same are provided. A first interlayer insulating layer is formed on the semiconductor substrate including the active region. Contact pads pass through the first interlayer insulating layer and contact with the active region. Contacts are formed on the contact pads and are connected to a conductive layer disposed above the contacts. The contact pads have a height lower than a top surface of the first interlayer insulating layer such that the contact pads have smaller thickness than the first interlayer insulating layer.

Semiconductor device preventing electrical short and method of manufacturing the same

A method of fabricating an image sensor which reduces fabricating costs through simultaneous formation of capacitor structures and contact structures may be provided. The method may include forming a lower electrode on a substrate, forming an interlayer insulating film on the substrate, the interlayer insulating film may have a capacitor hole to expose a first portion of the lower electrode. The method may further include forming a dielectric film on at least the first portion of the lower electrode, forming a first contact hole in the interlayer insulating film to expose a second portion of the lower electrode, forming a first conductive layer in at least the first contact hole and the capacitor hole, forming a second conductive layer on the first conductive layer to fill and cover the capacitor hole and the first contact hole, and planarizing the second conductive layer to simultaneously form a capacitor plug in the capacitor hole, a first contact plug in the first contact hole, an upper electrode beneath the capacitor plug, and a first contact barrier film beneath the first contact plug.

Methods of fabricating image sensors

An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.

Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same

An integrated circuit device includes a CMOS image sensor and a MIM capacitor therein. The CMOS image sensor includes a transfer gate electrode on a semiconductor substrate and a P-N junction photodiode within the semiconductor substrate. The photodiode is located adjacent a first side of the transfer gate electrode. A floating diffusion region is also provided within the semiconductor substrate. This floating diffusion region is located adjacent a second side of the transfer gate electrode. An interlayer insulating layer is provided on the semiconductor substrate. The interlayer insulating layer extends opposite the transfer gate electrode, the P-N junction photodiode and the floating diffusion region. An optical shielding layer of a first material is provided on the interlayer insulating layer. The optical shielding layer has a single opening therein, which extends opposite the P-N junction photodiode. This single opening inhibits optical crosstalk between adjacent unit cells within the sensor. A metal-insulating-metal (MIM) capacitor is also provided on the interlayer insulating layer. The MIM capacitor has an electrode (e.g., lower electrode) formed of the first material.

CMOS image sensors for preventing optical crosstalk

A method and an apparatus for tracking a location of a UE by using an integrated GPS and TDOA scheme in a mobile communication network are provided. A GPS position solution of the UE is obtained using GPS code information. TDOA position solutions are obtained using pilot signal transmission times of BSs and pilot signal reception times of the UE, and an average value of the TDOA position solutions is calculated. The GPS position solution is subtracted from the average to obtain a position error value, and an iterative method using a least square method is performed for the position error value to correct the position error. The corrected position error value is added to the average value of the TDOA position solutions to obtain a more precise position solution.

Method and apparatus for tracking location of user equipment by using integrated GPS and TDOA scheme

A method of manufacturing an image sensor comprises forming an isolation layer defining an active region in a semiconductor substrate using a first mask pattern formed on the semiconductor substrate, forming a first ion implantation mask pattern by reducing a width of the first mask pattern to expose an edge portion of the active region around the isolation layer, forming a first hole accumulation region by implanting a first conductive type of impurity ions into the edge portion of the active region using the first ion implantation mask pattern, forming a second ion implantation mask pattern covering the isolation layer and the first hole accumulation region, and forming a photodiode by implanting a second conductive type of impurity ions into a region of the semiconductor substrate using the second ion implantation mask pattern, wherein at least a portion of the region is surrounded by the first hole accumulation region in the active region.

Growing community of inventors

Suwon-si, South Korea

Byung-Jun Park