Korea Advanced Institute of Science and Technology

Skhynix Inc.

Lam Research Corporation

Korea Institute of Energy Research

Yonsei University

Byung Jin Cho

Jeong Hun Mun

Sang Hyun Park

Hyungsuk Alexander Yoon

Chung-yul Yoo

Dong Gyu Kim

Jung Min Moon

Hana Yoon

Woochul Kim

Hong Soo Kim

Sung Gap Im

Dong Kook Kim

Wanyeong Jung

Jae Hoon Bong

Seong Jun Yoon

Kwanyong Pak

Onejae Sul

Hyunsoo Jin

Seongho Kim

Min Ju Kim

Jong Kyung Park

Eui Joong Shin

Jae Joong Jung

Min Soo Suh

Kyounghun Kang

YoungKeun Park

Young Hwan Jin

Hyun Jun Ahn

Provided is a static change-sensing flip-flop. The static change-sensing flip-flop proposed herein includes a master latch and a slave latch configured to transfer and maintain input data according to a clock, and the master latch includes a pull-up network complementary circuit configured to connect to a master latch node (DN) and to prevent output of wrong data in a pull-up network operation while operating according to input data (D); a pull-down network complementary circuit configured to connect to the master latch node (DN) and to prevent output of wrong data in a pull-down network operation while operating according to a clock (CK); and a change-sensing circuit configured to prevent output of wrong data by a clock node (CS) and the master latch node (DN) in the pull-down network operation of the master latch.

Static change sense flip-flop

Disclosed are a capacitor for DRAM, a DRAM including the same, and a method of fabricating the same. The DRAM capacitor according to an embodiment may include a first electrode of the DRAM; a second electrode spaced apart from the first electrode; and a dielectric layer including a HfZrO film disposed between the first electrode and the second electrode. The HfZrO film may have an intermediate state corresponding to a phase transition region between a first state in which a tetragonal crystalline phase with anti-ferroelectricity property or a tetragonal crystalline phase is dominant, and a second state in which the orthorhombic crystalline phase with anti-ferroelectricity property or the orthorhombic crystalline phase is dominant. The HfZrO film may include both of the tetragonal crystalline phase and the orthorhombic crystalline phase. The HfZrO film maintains an intermediate state corresponding to the phase transition region within the operating voltage range of the capacitor.

Capacitor for dynamic random access memory, DRAM including the same and methods of fabricating thereof

A charge trapping non-volatile organic memory device according to the present invention has a structure in which an organic matter-based blocking layer, a trapping layer, and a tunneling layer are sequentially positioned between a gate and an organic semiconductor layer positioned on an insulating substrate, the trapping layer including a metal oxide and a polymer, and has an organic-inorganic composite film in which the metal oxide is dispersed in a polymer matrix in units of atoms.

Charge trapping non-volatile organic memory device

Disclosed is a flexible thermoelectric system. More particularly, the flexible thermoelectric system includes thermoelectric units that are wearable on the human body; a heating unit that is provided on one side of the thermoelectric units so as to be disposed between the thermoelectric units and the skin and is formed of a hygroscopic and exothermic material; and a heat dissipating unit that is provided on other side of the thermoelectric units such that the heat dissipating unit faces the heating unit and the thermoelectric units are disposed between the heat dissipating unit and the heating unit; wherein the heating unit and the heat dissipating unit are flexible. Due to such a configuration, the flexible thermoelectric system may be flexibly attached to the skin and temperature difference between upper and lower surfaces of the thermoelectric units may be maximized. Accordingly, power generation or cooling performance may be improved.

Flexible thermoelectric system

Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.

Method of sealing open pores on surface of porous dielectric material using iCVD process

Disclosed herein are a high-temperature structure for measuring properties of a curved thermoelectric device, which is capable of precisely measuring the properties of a medium-temperature curved thermoelectric device that is applied to a tube-type waste heat source and is used in research, and a system and a method for measuring the properties using the same. The high-temperature structure may include a plurality of rod-shaped cartridge heaters, and a heating element having a surface that is a curved surface coming into contact with a lower end of the curved thermoelectric device, having a plurality of holes for accommodating the plurality of cartridge heaters, and directly heating the lower end of the curved thermoelectric device.

High-temperature structure for measuring properties of curved thermoelectric device, and system and method for measuring properties of curved thermoelectric device using the same

This invention relates to a metalized skutterudite thermoelectric material having improved long-term stability and a method of manufacturing the same, wherein the skutterudite thermoelectric material is metalized with a multilayer structure including a Ti layer for preventing the diffusion of the skutterudite thermoelectric material and a Fe&#x2014;Ni layer for preventing an increase in the thickness of an intermetallic compound layer, whereby the performance of the skutterudite thermoelectric material does not deteriorate due to diffusion and formation of the intermetallic compound even upon long-term use, thus exhibiting improved stability of use, and moreover, the lifetime and stability of a thermoelectric power generation module using the skutterudite thermoelectric material can be increased, whereby the power generation efficiency of the thermoelectric power generation module can be increased in the long term.

Fe&#x2014;Ni/Ti metalized skutterudite thermoelectric material and method of manufacturing the same

This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NHF), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NHF); and (b) exposing the graphene to the ammonium fluoride (NHF), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.

[object Object]

A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate dielectric layer; and an intermediate layer formed between the gate dielectric layer and the flat band voltage adjusting layer. A negative flat band voltage generated at the intermediate layer and a positive flat band voltage generated between the substrate and the gate dielectric layer may offset each other.

Semiconductor element, method for fabricating the same, and semiconductor device including the same

A method of forming a high-quality graphene layer including forming a board layer; forming a stress reduction layer on the board layer; forming a metal catalyst layer on the stress reduction layer, the metal catalyst layer functioning as a catalyst for forming the graphene layer; and growing a graphene layer on the metal catalyst layer. The stress reduction layer reduces the stress of the metal thin film, thus, improving crystallinity and surface roughness of the metal thin film, and thereby effectively forming a high-quality graphene layer.

Method for growing high-quality graphene layer

This invention relates to a method and board for forming a graphene layer, and more particularly, to a method of forming a high-quality graphene layer using high pressure annealing and to a board used therein. The method of forming the graphene layer includes forming a reaction barrier layer on a substrate layer, forming a metal catalyst layer which functions as a catalyst for forming the graphene layer on the reaction barrier layer, subjecting a board including a stack of the layers to high pressure annealing, and growing the graphene layer on the metal catalyst layer. This board is subjected to high pressure annealing before growth of the graphene layer, and the reaction barrier layer is formed using a material having high adhesion energy to the metal catalyst layer so as to suppress migration of metal catalyst atoms.

Method and board for growing high-quality graphene layer using high pressure annealing

Disclosed herein is a graphene device having a structure in which a physical gap is provided so that the off-state current of the graphene device can be significantly reduced without having to form a band gap in graphene, and thus the on/off current ratio of the graphene device can be significantly increased while the high electron mobility of graphene is maintained.

Graphene device having physical gap

Disclosed herein is a method of remarkably improving the memory characteristics of a non-volatile memory device and the device reliability of the MOSFET using graphene which is a novel material that has a high work function and does not cause the deterioration of a lower insulating film.

Growing community of inventors

Daejeon, South Korea

Byung Jin Cho