Hyundai Electronics Industries Co. Ltd.

Byung Jin Cho

Se Aug Jang

Jong Choul Kim

Young Bog Kim

Tae Sik Song

Chan Lim

Kil Ho Lee

Sung Ku Kwon

Moon Sig Joo

There is provided a method for forming element isolation insulating film of a semiconductor device by employing PBL method for reducing the bird's beak and increasing the length of the effective active region. The method comprising the steps of forming a pad-oxide film, a stack-silicon film, and a nitride film on a semiconductor substrate in sequence; forming an element isolation region by selectively patterning the nitride film with an etching process by using an element isolation mask; and forming an element isolation film by field-oxidizing the element isolation region over the semiconductor substrate.

Method for forming an isolation insulating film for internal elements of

A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices. The method includes the steps of sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate, over-etching the first nitride film and the pad oxide film by use of an element isolating mask, thereby forming a first hole in the semiconductor substrate, cleaning the entire upper surface of the resulting structure by use of an etch solution, forming second-nitride film spacers on side walls of the selectively etched first nitride film, pad oxide film and first hole, forming a second hole in the first hole of the semiconductor substrate by use of the first nitride film and second-nitride film spacers as a mask, thermally oxidizing the surface of the second hole, thereby forming a thermal oxide film, and removing the first nitride film, pad oxide film and second-nitride film spacers, thereby forming an element isolating film.

Method for forming element isolating film of semiconductor device

A method for forming a field oxide film of a highly integrated semiconductor device, in which an annealing step is carried out during a field oxide film formation step for growing the field oxide film adapted to isolate elements of the semiconductor device. By the annealing step, it is possible to prevent a stress concentration phenomenon from occurring in a semiconductor substrate on which the field oxide film is formed, thereby reducing or eliminating a field oxide thinning phenomenon.

Method for forming field oxide film of semiconductor device

A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.

Method for forming field oxide of semiconductor device using wet and dry

Disclosed is a method for the shallow junction having a low sheet resistance and an improved electric characteristics, using the medium temperature CVD oxide layer deposited on the source/drain regions into which impurity ions are implanted. The medium temperature CVD oxide layer, which has a compressive stress of 1.53.times.10.sup.9 dyne/cm.sup.2, causes the surface of the silicon substrate to be subject to tensile stress. By forming the medium temperature CVD oxide layer on the silicon substrate at a temperature of approximately 760.degree.-820.degree. C., the defects in the inside of the substrate move to the surface of the silicon substrate. As a result, the concentration of the defects in the inside of the silicon substrate decreases so that the small size extended defects are on the surface of the silicon substrate. These extended defects can be naturally removed from the surface of the silicon substrate by performing a follow-up process such as a metalization or an additional thermal treatment process.

Method for removing defects by ion implantation using medium temperature

A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet etch to remove the oxide which is grown on the silicon substrate at a low temperature after formation of nitride spacer, thereby reproducing good profiles of the field oxide film.

Method for isolating elements of semiconductor device

A method for manufacturing a non-volatile memory cell which can improve the reliability and electrical operation characteristics of a memory cell by making a recess structure of a silicon substrate of a channel region in order to increase capacitance coupling ratio between a control gate and a floating gate is disclosed.

Method for manufacturing a non-volatile memory cell

The semiconductor device of the present invention is formed by forming a gate electrode in the form of T-shape, forming auxiliary gates which are capacitively coupling with the T-shape gate electrode at undercut portions below both sides of T-shape gate, forming a lightly doped region in the silicon substrate below the auxiliary gate by utilizing a doped oxide film, and forming a heavily doped region connected to a lightly doped region. Accordingly, the present invention can form a short channel length required for a highly integrated circuit device, and greatly improve the operational speed of the device by reducing channel resistance of a lightly doped region of LDD structure.

Method of manufacturing a semiconductor device

A method for forming an oxide film in a semiconductor device comprises a pre-oxidation process, a main oxidation process and a post-oxidation process. N.sub.2 O gas is used for the pre-oxidation process, a mixed gas of N.sub.2 O gas and NH.sub.3 gas is used for the main oxidation process, and N.sub.2 O gas is used for the post-oxidation process. The insulation characteristics of the oxide film are increased by introducing nitrogen, and amount of introduced nitrogen can be regulated by the controlling of amount of NH.sub.3 gas. Also, the problems encountered when NH.sub.3 gas and N.sub.2 O gas are used separately for the oxidation process can be solved by using of the mixed gas of NH.sub.3 gas and N.sub.2 O gas.

Method for forming an oxynitride film in a semiconductor device

A method for forming a gate electrode in a semiconductor device is disclosed. An injection of the holes which moved from the control gate to a dielectric layer is suppressed since the control gate electrode is formed with a double layer structure composed of polysilicon-germanium and polysilicon. Accordingly, the data retention time is increased by increasing the energy barrier for a hole.

Method for forming a gate electrode in a semiconductor device

An apparatus for manufacturing a semiconductor layer using rapid thermal processing, the apparatus comprising: a chamber for processing a wafer; a first microwave source for appling microwave to a center portion of said wafer, being formed on one side of said chamber; and a second microwave source for appling microwave to the edge portion of said wafer, being formed on the other side of said processing chamber; a gas inlet for injecting a processing gas into said processing chamber, being formed in top of said processing chamber; a gas outlet for exhausting said processing gas in said processing chamber.

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Ichon, South Korea

Byung Jin Cho