Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Byung-hoon Na

Yong-hwa Park

Yong-chul Cho

Yong-Tak Lee

Chang-young Park

Gun-wu Ju

Hee-ju Chio

Chang-soo Park

Jang-woo You

Yong-Hwa Park

Kwang-mo Park

Bong-Kyu Jeong

Hee-ju Choi

Yong-Chul Cho

Jang-Woo You

An optical device is provided including an active layer having two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. A thickness of the first quantum well layer and a thickness of the third quantum well layer are each different from a thickness of the second quantum well layer. Also, an energy level of the first quantum well layer and an energy level of the third quantum well layer are each different from an energy level of the second quantum well layer.

Optical device including three-coupled quantum well structure having multi-energy level

Provided is an optical device which includes an active layer which includes at least two outer barriers and at least one coupled quantum well, each of the at least one coupled quantum well is sandwiched between the at least two outer barriers. Each of the at least one coupled quantum well includes at least three quantum well layers and at least two coupling barriers interposed between the at least three quantum layers. The at least two coupling barriers have a potential energy which is higher than a ground level and is lower than energy levels of the at least two outer barriers.

Optical device including three coupled quantum well structure

A transmissive light modulator including a first reflection layer; a first active layer, arranged on the first reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; a second reflection layer arranged on the first active layer; a second active layer, arranged on the second reflection layer and including a plurality of quantum well layers and a plurality of barrier layers; and a third reflection layer arranged on the second active layer, wherein the first reflection layer and the third reflection layer are each doped with a first type dopant, and the second reflection layer is doped with a second type dopant, which is electrically opposite to the first type dopant.

Transmissive image modulator including stacked diode structure having multi absorption modes

Optical modulator having wide bandwidth based on Fabry-Perot resonant reflection is disclosed. The optical modulator includes: a bottom Distributed Bragg Reflector (DBR) layer; a top DBR layer including at least one layer, and a modified layer; and an active layer disposed between bottom and top DBR layers, wherein the at least one layer includes at least one pair of a first refractive index layer having a first refractive index and a second refractive index layer having a second refractive index, the modified layer includes at least one pair of a third refractive index layer having a third refractive index and a fourth refractive index layer having a fourth refractive index, the third and the fourth refractive indexes being different, and at least one of the third and the fourth refractive index layers has a second optical thickness that is not &#x3bb;/4 or that is not an odd multiple thereof.

Optical modulator

An optical image modulator and a method of manufacturing the same. The optical image modulator includes a substrate, an N electrode contact layer formed on the substrate, a lower distributed Bragg reflection (DBR) layer, a quantum well layer, an upper DBR layer, and a P electrode contact layer sequentially stacked on the N electrode contact layer, a P electrode formed on the P electrode contact layer, and an N electrode formed on the N electrode contact layer. The N electrode is a frame that surrounds the lower DBR layer.

Optical image modulator and method of manufacturing the same

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Seoul, South Korea

Byung-hoon Na