Samsung Electronics Co., Ltd.

Byung Hoon Jeong

Dae Hoon Na

Jeong Don Ihm

Tongsung Kim

Jung-June Park

Young Don Choi

Young Min Jo

Dong Ho Shin

Min Soo Kim

Jang Woo Lee

Sang-Hyuk Kwon

In-Woo Jun

Jae Woong Lee

Seung Woo Yu

Byung Kwan Chun

Seon Kyoo Lee

Sang Lok Kim

Jung-june Park

Tong Sung Kim

A storage system includes a memory controller providing a clock signal; a buffer having a first duty cycle corrector to receive the clock signal and a chip selection signal from the memory controller, perform a first duty correction operation on the clock signal using a first data code and output a first corrected clock signal, a register to store the first data code regarding the chip selection signal, and a sampler to receive a data signal and a data strobe signal regarding the data signal and output a data stream; and a nonvolatile memory having a second duty cycle corrector to receive the first corrected clock signal from the buffer and perform a second duty correction operation on the first corrected clock signal using a second data code and out a second corrected clock signal, a second data code generation circuit to generate the second data code based on the second corrected clock signal, and a data strobe signal generator to generate the data strobe signal based on the second corrected clock signal and provide the data strobe signal to the buffer.

Storage system for enhancing data valid windows of signals

A storage system includes: a memory controller which provides a clock signal; a buffer which receives the clock signal and re-drives the clock signal, the buffer including a sampler which receives a data signal and a data strobe signal regarding the data signal, and which outputs a data stream; and a nonvolatile memory, including: a first duty cycle corrector, which receives the clock signal outputs a corrected clock signal by performing a first duty correction operation on the clock signal; and a data strobe signal generator, which generates the data strobe signal based on the corrected clock signal and provides the data strobe signal to the buffer. The buffer receives the data strobe signal output from the nonvolatile memory, senses a duty ratio of the data strobe signal input to the sampler, and performs a second duty correction operation on the duty ratio of the input data strobe signal.

A nonvolatile memory device includes a first memory cell array, a first bi-directional multiplexer, a first register, a second register, a first I/O pad and a second I/O pad. The first memory cell array stores first data. The first bi-directional multiplexer receives the first data and distributes the first data into first sub-data and second sub-data. The first register stores first sub-data from the first bi-directional multiplexer. The second register stores second sub-data from a second bi-directional multiplexer. The first I/O pad outputs the first sub-data from the first register to outside. The second I/O pad outputs the second sub-data from the second register to the outside.

Nonvolatile memory device

A semiconductor package including a first master-slave status circuit configured to store one of a first signal or a second signal independently from a second master-slave status circuit, store the first signal in response to receiving a first initial signal from a first initialization circuit, the second master-slave status circuit configured to store one of the first signal or the second signal, store the first signal in response to receiving a second initial signal from a second initialization circuit, the first initialization circuit configured to provide the first initial signal to the first master-slave status circuit, the second initialization circuit configured to provide the second initial signal to the second master-slave status circuit, and a first master-slave determination circuit connected to the second master-slave status circuit, the first master-slave determination circuit configured to provide the second signal to the second master-slave status circuit may be provided.

Semiconductor package

A memory device that includes an interface that receives a data signal and a strobe signal from an external device, the strobe signal corresponding to the data signal; a strobe buffer that receives the strobe signal from the interface; a phase detection unit that detects a phase difference between the data signal output from the interface and the strobe signal output from the strobe buffer; a phase adjust unit that adjusts a phase of the strobe signal output from the strobe buffer based on the phase difference; and a sampling unit that samples the data signal output from the interface based on the strobe signal output from the phase adjust unit.

Memory devices and memory systems including the same

A latency circuit comprises a latency control block, an internal read command generator, and a latency signal generation unit. The latency control block generates a plurality of first control clocks by delaying a delay sync signal generated based on an external clock, and generates a second control clock having a margin with respect to a read command decoded based on the delay sync signal. The internal read command generator samples the second control clock using the decoded read command and generates an internal read command based on a sampled second control clock. The latency signal generation unit generates a latency signal based on a shifting operation performed on the internal read command using the plurality of first control clocks.

Latency circuit and semiconductor device comprising same

In an example embodiment, the semiconductor device includes a clock signal generation circuit. The clock signal generation circuit is configured to generate at least one control clock signal in response to an external clock signal and a read command signal. The clock signal generation circuit includes a plurality of delay circuits, and the clock signal generation circuit is configured to selectively disable at least one of the plurality of delay circuits to reduce power consumption.

Growing community of inventors

Hwaseong-si, South Korea

Byung Hoon Jeong