Samsung Electronics Co., Ltd.

Byung-Hoo Jung

Chang-Won Hwang

Byung-Seong Bae

Joo-hyung Lee

Mun-Pyo Hong

Yong-suk Jin

Chan-Joo Youn

Joo-Hyung Lee

Ho-Hyeong Lee

Kyu-Sun Moon

A source electrode and a metal pattern for a storage capacitor are formed on an insulating substrate, a silicon layer having a doped source region and a doped drain region is formed on the substrate and the source and the drain regions directly contact to the source electrode and the metal pattern. A gate insulating film is formed thereon, and a storage electrode is formed on the gate insulating film opposite the metal pattern. A passivation film covering the storage electrode is formed and the pixel electrode is formed thereon. The pixel electrode is directly connected to the drain region or to the metal pattern.

Method for manufacturing a liquid crystal display

Liquid crystal display having a source electrode and a metal pattern for a storage capacitor formed on an insulating substrate

Liquid crystal display and a method for manufacturing the same

Disclosed is a display device (e.g., a liquid crystal display), and an apparatus and a method for driving the display device. The LCD includes an LCD panel having a plurality of gate lines, a plurality of data lines insulated from and intersecting the gate lines, and a plurality of TFTs each having a gate electrode connected to one of the gate lines and a source electrode each connected to one of the data lines; a gate driver for sequentially supplying gate drive signals to the gate lines to turn the TFTs ON; and a data driver for dividing the data lines into a certain number of blocks, each block having a predetermined number of data lines, and applying image signals to the data lines in an (n)th block, and applying precharging voltages to the data lines in an (n&plus;j)th block. The apparatus includes the gate driver and the data driver. The method includes the steps of sequentially supplying the gate drive signals to the gate lines to turn the TFTs ON; and applying the image signals to the data lines in an (n)th block, and applying precharging voltages to the data lines in an (n&plus;j)th block.

Driving device and driving method for a display device

Liquid crystal displays and manufacturing methods thereof the interlayer insulating film having a thinner depth

The present invention modifies LCD panel display modes with a simple circuit configuration. When a driving frequency is supplied that does not drive all the configured pixels, the present invention drives all the pixels according to a multisync mode. The present invention comprises a LCD panel including a plurality of gate lines, a plurality of data lines, and a plurality of TFTs each having a gate electrode connected to the gate line and having a source electrode connected to the data line; a data driver receiving four driving clock signals and performing a multisync function on the driving frequency; a gate driver receiving four shift clock signals and performing multisync function on the driving frequency; and a timing controller outputting four driving clock signals and shift clocks and changing and outputting the status of the four driving clock signal and the shift clocks according to the normal mode or multisync mode.

Multisync display device and driver

A double level gate layer with an undercut lower gate layer can be formed by using the etching rate difference between the upper gate layer and the lower gate layer in a polycrystalline Si type TFT LCD that has P-channel TFTs and N-channel TFTs. An LDD structure can be easily formed by using an upper gate layer as ion implant mask during the N-type ion implantation. LDD size is decided by the skew size between the upper gate layer and the lower gate layer. Furthermore, a photolithography step necessary for masking the ion implantation can be skipped.

Method for forming a TFT in a liquid crystal display

Liquid crystal displays, manufacturing methods and a driving method thereof

A plurality of gate lines transmits scanning signals are formed on a substrate and a plurality of storage electrode lines are formed in parallel to the gate lines. The storage electrode lines and the gate lines are alternately arranged. A plurality of data lines transmitting image signals intersect the gate lines and the storage electrode lines with being insulated therefrom and a plurality of pixel electrodes are formed. The pixel electrode, which is connected to the thin film transistor which is turned on or off by the nth gate line,, overlaps the nth and the (n&minus;1)th storage electrode lines,which are respectively placed between the nth and the (n&minus;1)th gate lines and between the (n&minus;1)th and the (n 2)th gate lines, and the (n&minus;1)th gate line,. Therefore, abnormal electric field near the edges of the pixel electrodes is covered by the storage electrode lines and the gate lines.

Thin film transistor array panels for liquid crystal displays

A method for fabricating a thin film transistor includes the steps of calculating a scan pitch of a laser beam such that an unevenly crystallized area and an evenly crystallized area of a crystallized polycrystalline silicon layer are alternately arranged at a regular interval, crystallizing an amorphous silicon layer to a polycrystalline silicon layer by scanning the laser beam according to the scan pitch, calculating a spacing pitch of active patterns from the scan pitch of the laser beam, and forming the active patterns in a selected portion of the polycrystalline silicon layer according to the spacing pitch.

Method for fabricating a thin film transistor and a substrate and thin film transistor manufactured using the same

Thin film transistor-liquid crystal display and a manufacturing method thereof

The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.

Thin film transistor-liquid crystal display and a manufacturing method

A liquid crystal display including a driving circuit is provided. The LCD in which one gate line is driven by both left and right gate drivers includes a couple of switching means which are placed between the gate driver and gate line, the couple of switching means being activated and deactivated by switching control signals to switch the output of the gate driver. When one of the gate drivers does not operate, the output of the gate driver having the operational problem is prevented from being applied to the gate lines, by a switching operation. Therefore, even when only one of gate drivers operates, the display panel can function properly, thereby preventing the lowering of picture quality and improving product yield.

Liquid crystal display devices having redundant gate line driver

A method of manufacturing a semiconductor device having enhanced hydrogenation effect using a refractory metal capping layer formed over a plasma nitride layer, whereby hydrogen from the plasma nitride layer is diffused into a semiconductor transistor structure under heat treatment.

Growing community of inventors

Kyungki-do, South Korea

Byung-Hoo Jung