Hyundai Electronics Industries Co. Ltd.

Lg Semicon Co., Ltd.

Ig Semicon Co., Ltd.

Byung Hak Lee

Jeong Soo Byun

Chang Hee Han

Kee Sun Lee

Jeong Soo Songhak Samik Apt 102-601 Byun

A method for fabricating a conductive line pattern for a semiconductor device including the steps of: forming a gate insulation film on the upper surface of a semiconductor substrate; forming a polysilicon layer on the upper surface of the gate insulation film; forming a WNx film on the upper surface of the polysilicon layer; forming a first insulation film on the upper surface of the WNx film; patterning the first insulation film, the WNx film and the polysilicon layer, to form a conductive line pattern; and selectively oxidizing the polysilicon layer. With the method, in view of forming the conductive line pattern in the WNx/poly-Si structure, the thermal treatment processes are reduced in number, so that the thermal stress applied to the conductive line pattern is diminished, and thus, a reliability of the semiconductor device is improved. In addition, as the thermal treatment processes are reduced in number, the processes are simplified, and accordingly a time required for fabricating the conductive line pattern of the semiconductor is decreased.

Method for fabricating conductive line pattern for semiconductor device

A method for forming a gate electrode of a semiconductor device, which improves thermal stability of a tungsten/polysilicon structure. The method for forming a gate electrode of a semiconductor device includes: sequentially forming a first insulating film, a polysilicon layer and a tungsten layer on a semiconductor substrate; adding oxygen to the tungsten layer; forming a second insulating film on the tungsten layer to which oxygen is added; and selectively removing the second insulating film, the tungsten layer, the polysilicon layer and the first insulating film to form a gate electrode.

Method for forming gate electrode of semiconductor device

The present invention relates to a method for forming a gate electrode in a semiconductor device, which can improve GOI characteristics and allows for an effective suppression of metal silicide spike formation. This method includes the steps of forming a gate insulating film over a semiconductor substrate, forming a first semiconductor layer over the gate insulating film, forming a barrier layer over the first semiconductor layer to prevent formation of metal silicide spikes in the first semiconductor layer, forming a second semiconductor layer over the barrier layer, and forming a metal silicide layer over the second semiconductor layer.

Gate electrode in a semiconductor device and method for forming thereof

Method for forming a conductive line of a semiconductor device which has a high thermal stability and low electrical resistance includes the steps of forming an insulating layer on a semiconductor substrate, sequentially forming a semiconductor layer and a tungsten film on the insulating layer, nitrifying the tungsten film with heat treatment, and selectively etching the tungsten film and the semiconductor layer.

Method for forming conductive line of semiconductor device

A method for forming a gate electrode on a semiconductor substrate that includes forming a gate insulating layer on a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, forming a tungsten silicide layer on the polysilicon layer, forming a diffusion barrier layer on the tungsten silicide layer, forming a tungsten layer on the diffusion barrier layer, crystallizing the diffusion barrier layer, forming a first insulating layer on the tungsten layer, forming a gate electrode, forming an oxide layer, and forming a second insulating layer.

Method for forming a gate electrode on a semiconductor substrate

A method for fabricating a semiconductor device improves step coverage and resistivity. The method includes the steps of forming a doped silicon layer on a substrate, forming a silicide layer containing more metal atoms than silicon atoms on the doped silicon layer, and heat treating in nitrogen to form a second silicide layer having a tetragonal phase crystal structure and a silicon nitride film on the top surface of the second silicide layer.

Method for fabricating semiconductor device having improved step coverage and low resistivity contacts

Method for fabricating a semiconductor device, is disclosed, in which a grain size is made coarse for forming a thin film with a low resistance, including the steps of (1) depositing an insulating film on a substrate, (2) depositing a silicon layer on the insulating film, (3) depositing an amorphous metal nitride film on the silicon layer, and (4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.

Method for fabricating semiconductor device

Method for fabricating a semiconductor device, is disclosed, which is suitable for improving a resistivity, including the steps of forming a silicon layer on a substrate, forming a crystalline metal silicide layer on the silicon layer, forming an amorphous metal silicide layer by injecting ions into the crystalline metal silicide layer, and crystallizing the amorphous metal silicide by heat treating the amorphous metal silicide.

A method of forming an electrode of a semiconductor device includes the steps of forming an insulating layer on a semiconductor substrate, forming a tungsten silicide layer on the insulating layer, implanting impurity ions into the tungsten silicide layer to form an impurity region in a lower portion of the tungsten silicide layer, and carrying out a heat treatment to the substrate on which the tungsten silicide layer is formed.

Growing community of inventors

Chungcheongbuk-do, South Korea

Byung Hak Lee