Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Byung Hak Jeong

Duk Hyun Park

Sang Rock Park

Eun Jung Ko

Chung Song Kim

Sung Wook Moon

Ki Yong Hong

Sang Youl Lee

Tae Yong Lee

Ji Hyung Moon

Kyung Wook Park

Jung Hyeok Bae

Yong Jun Kim

Bum Doo Park

Young Kuen Jung

Eun Bin Ko

An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer.

Semiconductor device

A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part contacting a side surface of the flat part, may be between 70% or more and 95% or less with respect to a first distance, which is from the bottom surface of the semiconductor structure to the top surface of the 1-1 conductive-type semiconductor layer. The present invention may enhance light flux by improving the current spreading phenomenon of the semiconductor device.

Light-emitting semiconductor device having flat portion and concave-convex portion for enhanced light extraction efficiency

A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.

Light emitting diode and light emitting diode package

An embodiment discloses a light emitting device and a display comprising the same. The light emitting device includes: a light transmitting substrate; a light emitting structure including a second conductive semiconductor layer disposed on the light transmitting substrate, a first conductive semiconductor layer disposed on the second conductive semiconductor layer, and an active layer disposed between the second conductive semiconductor layer and the first conductive semiconductor layer; an insulating layer covering the light emitting structure; a first ohmic electrode electrically connected to the first conductive semiconductor layer; a second ohmic electrode disposed on one side of the second conductive semiconductor layer facing the light transmitting substrate and electrically connected to the second conductive semiconductor layer; a first electrode electrically connected to the first ohmic electrode through the insulating layer; and a second electrode electrically connected to the second ohmic electrode through the insulating layer and the light emitting structure, wherein the active layer emits light of a red wavelength band, the second ohmic electrode includes a pad electrode disposed at the center of the second conductive semiconductor layer and a plurality of branched electrodes extending outward from the center of the second conductive semiconductor layer.

Light emitting device and display comprising same

A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.

Red light emitting device and lighting system

Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

Light emitting device

Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.

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Seoul, South Korea

Byung Hak Jeong