Electronics and Telecommunications Research Institute

Byung Gyu Chae

Hyun Tak Kim

Kwang Yong Kang

Doo Hyeb Youn

Gyungock Kim

Seong Hyun Kim

Bong Jun Kim

Yong Sik Lim

Hwi Dae Kim

Yoon Ho Song

Hyun-Tak Kim

Sun Jin Yun

Kwang-Yong Kang

Sooyeul Lee

Sang Kuk Choi

Gyung Ock Kim

Sung Woong Shin

Hyun Eui Kim

Min Sung Yoon

Yoon Seon Song

Hyo Bong Hong

Sunglyul Maeng

Joonku Hahn

Sungyul Maeng

Yong Wook Lee

Doo Hyeb Yoon

Sung Lyul Maeng

A 3D optical microscope device of a small form factor optical system is disclosed. A transmission optical system device comprises a first lens having a left side disposed in contact with an input plane, and a second lens having a right side disposed in contact with a rear focal plane and disposed at a position spaced apart by a focal length of the first lens. The first lens and the second lens Fourier-transform a light signal incident on the input plane and output the transformed signal to the rear focal plane.

3D optical microscope device of small form factor optical system

Provided are a method of displaying a digital holographic image and a digital hologram display apparatus, the method including generating and converting a digital hologram, recording the digital hologram in a spatial light modulator, radiating coherent parallel light to the spatial light modulator, removing an aliasing noise image, and implementing a reconstructed image reconstructed by the spatial light modulator.

Digital hologram display apparatus and displaying method of digital holographic image

A system and method for hologram synthesis and processing capable of synthesizing holographic 3D data and displaying (or reconstructing) a full 3D image at high speed using a deep learning engine. The system synthesizes or generates a digital hologram from a light field refocus image input using the deep learning engine. That is, RGB-depth map data is acquired at high speed using the deep learning engine, such as a convolutional neural network (CNN), from real 360&#xb0; multi-view color image information and the RGB-depth map data is used to produce hologram content. In addition, the system interlocks hologram data with user voice recognition and gesture recognition information to display the hologram data at a wide viewing angle and enables interaction with the user.

System and method for digital hologram synthesis and process using deep learning

Provided are an image system and an image reconstruction method using the same. The image system includes an image scan device, a spectrum signal generation device, and an image recovery device. The image scan device generates a magnetic particle detection signal on the basis of an induced magnetic field induced from a magnetic particle. The spectrum signal generation device transforms the magnetic particle detection signal to a detection spectrum signal on the basis of a two-dimensional Fourier transform kernel. The image recovery device generates an image signal on the basis of the detection spectrum signal and a system matrix. According to the inventive concept, a data amount for image reconstruction may be ensured.

Imaging system and image reconstruction method using the same

Holographic display apparatuses are provided. The holographic display apparatus may include a light source module generating coherent light, at least two input optical systems converging the light generated from the light source module on at least two converging points, an output optical system mixing the lights provided from the at least two input optical systems to provide a hologram image, and a spatial light modulating module modulating the light.

Holographic display apparatus capable of steering view window

A power device package controls heat generation of a power device using a semi-permanent metal-insulator transition (MIT) device instead of a fuse, and emits heat generated by the power device through a small-sized heat sink provided only in one region on the power device, thereby ensuring excellent dissipation of heat. Therefore, the power device package can be usefully applied to any electric/electronic circuit that uses a power device.

Power device package having enhanced heat dissipation

An electron emission device having a high electron emitting rate and a display including the device are provided. The electron emission device using abrupt metal-insulator transition, the device including: a board; a metal-insulator transition (MIT) material layer disposed on the board and divided by a predetermined gap with portions of the divided MIT material layer facing one another; and electrodes connected to each of the portions of the divided metal-insulator transition material layer for emitting electrons to the gap between the portions of the divided metal-insulator transition material layer.

Electron emission device using abrupt metal-insulator transition and display including the same

Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material

Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit

Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VOthat changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.

Metal-insulator transition switching transistor and method for manufacturing the same

A current-jump-control circuit including an abrupt metal-insulator phase transition device is proposed, and includes a source, the abrupt metal-insulator phase transition device and a resistive element. The abrupt metal-insulator phase transition device includes first and second electrodes connected to the source, and shows an abrupt metal-insulator phase transition characteristic of a current jump when an electric field is applied between the first electrode and the second electrode. The resistive element is connected between the source and the abrupt metal-insulator phase transition device to control a jump current flowing through the abrupt metal-insulator phase transition device. According to the above current control circuit, the abrupt metal-insulator phase transition device can be prevented from being failed due to a large amount of current and thus the current-jump-control circuit can be applied in various application fields.

Current-jump-control circuit including abrupt metal-insulator phase transition device

Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VOthin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VOthin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.

Growing community of inventors

Daejeon, South Korea

Byung Gyu Chae