Samsung Electronics Co., Ltd.

International Business Machines Corporation

Infineon Technologies Ag

Chartered Semiconductor Manufacturing Ltd (corporation)

Infineon North

Byung-Goo Jeon

Alois Gutmann

Sung-Chul Park

Fang Chen

Nikki Edleman

Jae-Min Yu

Won Young Song

In-Soo Cho

Chang-Yup Lee

Jun-Yeoul You

A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

Contact patterning method with transition etch feedback

A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.

Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension

A method of fabricating a non-volatile memory device includes the steps of forming a lower conductive layer on a substrate, forming a lower and an upper sacrificial patterns on the substrate with the lower conductive layer, wherein the lower and upper sacrificial patterns include a trench exposing the lower conductive layer, forming mask spacers on sidewalls of the upper and lower sacrificial patterns, using the mask spacers and the upper sacrificial pattern as an etch mask, etching the exposed lower conductive layer to form a lower conductive pattern exposing the substrate, forming a plug conductive layer covering an entire surface of a substrate with the lower conductive pattern, and planarizingly etching the plug conductive layer until the lower sacrificial pattern is exposed, thereby forming a source plug in a gap region between the mask spacers that is connected to the substrate.

Method of fabricating non-volatile memory device

Growing community of inventors

Fishkill, NY, United States of America

Byung-Goo Jeon