Samsung Display Co., Ltd.

Kobe Steel, Ltd.

Kookmin University

Other

Yonsei University

Samsung Fine Chemicals Co., Ltd.

Industry-Academic Cooperation Foundation, Dankook University

Byung Du Ahn

Gun Hee Kim

Je Hun Lee

Toshihiro Kugimiya

Jae Woo Park

Aya Miki

Shinya Morita

Ji Hun Lim

Jun Hyun Park

Kyoung Won Lee

Jun Hyung Lim

Sei-yong Park

Jung Gun Nam

Hiroaki Tao

Dae Hwan Kim

Hiroshi Goto

Yeon Hong Kim

Satoshi Yasuno

Jin Tae Jeong

Ji Hyun Ka

Jeong Ho Lee

Tae Hoon Kwon

Seung Ji Cha

Zail Lhee

Min Ku Lee

Keon Woo Kim

Ho Kyoon Kwon

Tomoya Kishi

Jin Seong Park

Seung Ho Yeon

Mi-Hyae Park

Bu Sop Song

Tae Gweon Lee

Hyun Kwang Jung

Jin Su Park

Woong Hee Jeong

Hyun Jae Kim

Jung Hwa Kim

Jae Hyeong Kim

Takeaki Maeda

Yumi Iwanari

Sei-Yong Park

Jin Hyun Park

Jung Hak Nam

Junhyun Park

Jun Ho Song

Dae Young Lee

Hyun Jae Na

Gug Rae Jo

So Young Koo

Dong Hwan Shim

Jihun Lim

Kazushi Hayashi

Yeon Gon Mo

Young Joo Choi

Jaehyeong Kim

Jee-Hun Lim

Kwang Suk Kim

Kenta Hirose

Yeon-Hong Kim

Yasuaki Terao

Jaewoo Park

Jehun Lee

Hyunkwang Jung

Shuji Kosaka

Gug Rae Cho

A display device includes a substrate including a first pixel region, a second pixel region having an area smaller than that of the first pixel region, and a peripheral region surrounding the first pixel region and the second pixel region, a second pixel provided in the second pixel region, a second line connected to the second pixel, an extension line extended to the peripheral region, a dummy part located in the peripheral region to overlap with the extension line, a power line connected to the first and second pixel regions, and a connection line located in the peripheral region to be connected to the dummy part, the connection line being electrically connected to a portion of the second pixel region, wherein the second pixel region includes a first sub-pixel region connected to the connection line and a second sub-pixel region except the first sub-pixel region.

Display device

A thin film transistor includes a gate electrode, a first insulating layer disposed to cover the gate electrode, a semiconductor layer disposed on the first insulating layer that includes a first side surface portion, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the first insulating layer that includes a second side surface portion. The first side surface portion makes contact with the second side surface portion.

Thin film transistor unaffected by light and display apparatus having the same

A display panel comprises a substrate, a gate line, a data line insulated from the gate line, a thin film transistor electrically connected to the gate line and the data line, wherein the thin film transistor comprises a gate electrode group formed on the substrate, a gate insulating film formed on the gate electrode group, an active layer formed on the gate insulating film to at least partially overlap the gate electrode group and a source electrode and a drain electrode formed on the active layer so as to be spaced apart from each other, wherein the gate electrode group includes a first gate electrode formed on the substrate, a second gate electrode formed on the first gate electrode, and an insulating layer between the first gate electrode and the second gate electrode, and wherein the first gate electrode has reflectivity higher than that of the second gate electrode.

Display panel having improved brightness and method for fabricating the same

The oxide of the present invention for thin-film transistors is an In&#x2014;Zn&#x2014;Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In&#x2014;Zn&#x2014;Sn-based oxide are expressed by [Zn], [Sn], and [In], the In&#x2014;Zn&#x2014;Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])&#x2264;0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])&#x3e;0.5.[In]/([In]+[Zn]+[Sn])&#x2264;0.3&#x2003;&#x2003;(1),[In]/([In]+[Zn]+[Sn])&#x2264;1.4&#xd7;{[Zn]/([Zn]+[Sn])}&#x2212;0.5&#x2003;&#x2003;(2),[Zn]/([In]+[Zn]+[Sn])&#x2264;0.83&#x2003;&#x2003;(3),and0.1&#x2264;[In]/([In]+[Zn]+[Sn])&#x2003;&#x2003;(4).According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

Oxide for semiconductor layer of thin-film transistor, semiconductor layer of thin-film transistor having said oxide, and thin-film transistor

In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5&#xd7;10cmor less, and a mobility satisfies 15 cm2/Vs or more.

Oxide for semiconductor layer of thin film transistor, thin film transistor and display device

The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an oxide semiconductor. A thin film transistor according to an exemplary embodiment of the inventive concept includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a first semiconductor and a second semiconductor that overlap the gate electrode with the gate insulating layer interposed therebetween, the first semiconductor and the second semiconductor contacting each other; a source electrode connected to the second semiconductor; and a drain electrode connected to the second semiconductor and facing the source electrode, wherein the second semiconductor includes gallium (Ga) that is not included in the first semiconductor, and a content of gallium (Ga) in the second semiconductor is greater than 0 at. % and less than or equal to about 33 at. %.

Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor

A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.

Display device and method of driving the same

Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

Thin film transistor

A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the gate electrode; a semiconductor layer positioned on the gate insulating layer and including a channel region; a source electrode and a drain electrode positioned on the semiconductor layer and facing each other; and a passivation layer configured to cover the source electrode, the drain electrode, and the semiconductor layer, wherein the semiconductor layer includes a relatively thick first portion between the source electrode and the gate electrode and a relatively thinner second portion between the drain electrode and the gate electrode overlap, the relatively thick first portion being sufficiently thick to substantially reduce a charge trapping phenomenon that may otherwise occur at a gate electrode to gate dielectric interface if the first portion were as thin as the second portion.

Thin film transistor display panel

A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.

Solution composition for passivation layer, thin film transistor array panel, and manufacturing method for thin film transistor array panel

Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to light, a bias stress or the like, thereby exhibiting excellent stress stability. A thin film transistor of the present invention is provided with a gate electrode, an oxide semiconductor layer composed of a single layer which is used as a channel layer, an etch stopper layer to protect a surface of the oxide semiconductor layer, a source-drain electrode, and a gate insulator layer arranged between the gate electrode and the channel layer. The metal elements constituting the oxide semiconductor layer comprise In, Zn and Sn. The hydrogen concentration in the gate insulator layer in direct contact with the oxide semiconductor layer is controlled to 4 atomic % or lower.

Thin film transistor and display device

Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.

Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof

A thin film transistor containing at least, a gate electrode, a gate insulating film, an oxide semiconductor layer, source-drain electrode and a passivation film, in this order on a substrate. The oxide semiconductor layer is a laminate containing a first oxide semiconductor layer (IGZTO) and a second oxide semiconductor layer (IZTO). The second oxide semiconductor layer is formed on the gate insulating film, and the first oxide semiconductor layer is formed between the second oxide semiconductor layer and the passivation film. The contents of respective metal elements relative to the total amount of all the metal elements other than oxygen in the first oxide semiconductor layer are as follows; Ga: 8% or more and 30% or less; In: 25% or less, excluding 0%; Zn: 35% or more to 65% or less; and Sn: 5% or more to 30% or less.

Growing community of inventors

Hwaseong, South Korea

Byung Du Ahn