Lg Philips Lcd Co., Inc.

Lg Electronics Inc.

Lg Display Co., Ltd.

Lg Lcd Inc.

Byung-chul Ahn

Yong-wan Kim

Soon-sung Yoo

Hyun-Sik Seo

Byoung-ho Lim

Soon-Sung Yoo

Keuk-Sang Kwon

Yong-Wan Kim

Yu-Ho Jung

In-Duk Song

Jae-Gu Lee

The present invention discloses a four-mask method of manufacturing an array substrate of a liquid crystal display device and the liquid crystal display device having the same array substrate. The method includes forming a plurality of gate lines, gate electrodes and gate extension lines by depositing a first metallic material on a substrate and patterning the first metallic material with a first mask, the gate extension lines extending toward the opposite direction of the gate electrodes; forming a first insulating layer on the whole surface having gate lines, gate electrodes, and gate extension lines; forming a plurality of data lines, source electrodes, drain electrodes, and capacitor electrodes over the gate lines by depositing a semiconductor layer, an ohmic contact layer and a second metallic material sequentially on the first insulating layer, and patterning the second metallic material and the ohmic contact layer with a second mask; forming a passivation layer and a plurality of first and second contact holes by depositing a second insulating layer on the data lines, the source electrodes, the drain electrodes and the capacitor electrodes, and patterning the second insulating layer with a third mask, the first contact holes exposing a portion of the drain electrode, the second contact holes exposing a portion of the capacitor electrodes; and forming a plurality of pixel electrodes by depositing a transparent conductive layer on the passivation layer, and patterning the transparent conductive layer by a fourth mask, the pixel electrodes contacting the drain electrodes through the first contact holes and contacting the capacitor electrodes through the second contact holes.

Array substrate for liquid crystal display device and the fabrication method of the same

An array substrate of a liquid crystal display device includes a substrate; an elongated gate line having a gate electrode on said substrate, said gate line extending in a first direction; a gate extension line on said substrate and that connects to said gate line, said gate extension line extending substantially perpendicularly to said gate line; a first insulating layer over said substrate, said gate line, and said gate extension line; a storage capacitor comprising a portion of said gate line, a conductive capacitor electrode that overlaps a portion of said gate line, an ohmic contact layer and a dielectric layer that includes said first insulating layer and a semiconductor layer; a passivation layer on said capacitor electrode; and a pixel electrode on said passivation layer, said pixel electrode contacting said capacitor electrode through a hole in said passivation layer.

Array substrate for liquid crystal display device having two storage capacitor structures and the fabrication method of the same

A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &#x3bc;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

Thin-film transistor and method of making same

A method of fabricating a thin film transistor includes providing a substrate; depositing amorphous silicon on the substrate; patterning the amorphous silicon to form a plurality of island-shaped amorphous silicon layers; forming spaces between the substrate and the amorphous silicon layers; forming a channel region, a source ohmic contact region, and a drain ohmic contact region on each of the amorphous silicon layers by ion doping the island-shaped amorphous silicon layers; forming a first insulating layer over the amorphous silicon layers; crystallizing the plurality of the island-shaped amorphous silicon layers to form a plurality of island-shaped polysilicon layers by irradiating laser beams onto the first insulating layer, wherein the plurality of the island-shaped polysilicon layers are the active layers of the thin film transistor; forming a gate electrode on the first insulating layer; and forming source and drain electrodes that contact the source and drain ohmic contact regions, respectively. The spaces formed between the substrate and silicon layers increase the grain size of the polysilicon layers.

Fabricating method of polysilicon thin film transistor having a space and a plurality of channels

A liquid crystal display, and a method of manufacturing thereof, includes providing a substrate; depositing sequentially a first metal layer and a first insulating layer on the substrate; patterning the first metal layer and the first insulating layer using a first mask to form a gate line and a first gate insulating layer; depositing sequentially a second gate insulating layer, a pure semiconductor layer, a doped semiconductor layer and a second metal layer over the whole substrate; patterning the second metal layer using a second mask to form a data line, source and drain electrodes, a capacitor electrode, the capacitor electrode overlapping a portion of the gae line; etching the doped semiconductor layer between the source and drain electrodes to form a channel region; depositing a third insulating layer over the whole substrate; patterning the third insulating layer using a third mask to form a passivation film, the passivation film having a smaller width than the data line and covering the source and drain electrodes and exposing a portion of the drain electrode and the capacitor electrode; depositing a transparent conductive material layer over the whole substrate; and patterning the transparent conductive material layer using a fourth mask to pixel electrode, the pixel electrode contacting the drain electrode.

Liquid crystal display device and method of manufacturing the same

The present invention discloses an array substrate for an active-matrix LCD device and a method of fabricating the same. The array substrate reduces the number of masks used in the fabrication process so that reliability is enhanced and the cost is reduced over the conventional device and method.

A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &mgr;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

A TFT array substrate for use in an LCD device includes at least one repair line to repair line defects. The repair line(s) is formed when forming the pixel electrode so that additional process steps are not required. Accordingly, productivity can be increased. Moreover, either a short-circuit or an open-circuit can be repaired due to the repair line(s). Thus, in the present invention, a TFT array substrate, including: a substrate; a gate line formed on the substrate, arranged in a transverse direction and having a gate electrode; a data line insulated against the gate line by a first insulation layer, arranged in a longitudinal direction perpendicular to the gate line, having a source electrode near the cross point of the gate and data lines, and having first and second data lines which are defined by a cross point of the gate and data lines; a drain electrode space apart from the source electrode over the gate electrode; a pixel electrode connecting to the drain electrode; and a repair line(s) insulated against the data and gate lines by insulation layers and overlapping the gate and data lines, one repair line overlapping a free end of the other repair line and the gate line.

Array substrate for use in LCD device

A thin film transistor includes a substrate having an upper side; a plurality of parallel-connected active layers supported on the upper side of the substrate; spaces defined between the substrate and the active layers; a first insulating layer on the plurality of active layers; a gate electrode on the first insulating layer over the plurality of active layers; and source and drain electrodes contacting the plurality of the active layers. The active layers of the thin film transistor are laser annealled to polycrystalline silicon. The spaces result in large polysilicon grains that result in good electrical characteristics.

Polysilicon thin film transistor used in a liquid crystal display and the fabricating method

The present invention discloses a transflective liquid crystal display device, including a first transparent substrate; a second transparent substrate having a color filter and spaced apart from the first transparent substrate; a liquid crystal layer interposed between the first and second transparent substrate; a gate electrode arranged on the first transparent substrate; a reflective electrode arranged on the transparent substrate and spaced apart from the gate electrode, the reflective electrode having a light transmitting hole, the light transmitting hole transmitting light; a first insulating layer arranged on the first transparent substrate while covering the gate electrode and the reflective electrode; a semiconductor layer having first and second ends and being arranged over the gate electrode; a source electrode overlapping the first end portion of the semiconductor layer; a drain electrodes spaced apart from the source electrode, overlapping the second end portion of the semiconductor; a second insulating layer covering the source and drain electrodes and having a first contact hole located on a predetermined portion of the drain electrode; a transparent electrode arranged over the reflective electrode and contacting the drain electrode through the first contact hole and covering a portion of the second insulating layer corresponding to the light transmitting hole; and backlight device supplying light toward the light transmitting hole.

Transflective liquid crystal display device having reflective electrode with a light-transmitting hole, situated below a transparent electrode

A method of manufacturing an LCD array substrate and LCD made by that method are disclosed. A plurality of gate lines, gate electrodes and gate extension lines are formed by depositing and patterning a first metallic material using a first mask. A first insulating layer is then formed. A plurality of data lines, source electrodes, drain electrodes, and capacitor electrodes are then formed by depositing and patterning suitable materials using a second mask. A passivation layer is then formed and patterned to create first and second contact holes using a third mask. The first contact holes expose the drain electrodes, the second contact holes expose the capacitor electrodes. A plurality of pixel electrodes are then formed by depositing and patterning a transparent conductive layer using a fourth mask. The pixel electrodes contact the drain electrodes through the first contact holes and contact the capacitor electrodes through the second contact holes.

Array substrate for liquid crystal display and the fabrication method of the same

The present invention discloses a method of manufacturing a liquid crystal display device, including: providing a substrate; depositing sequentially a first metal layer and a first insulating layer on the substrate; patterning the first metal layer and the first insulating layer using a first mask to form a gate line and a first gate insulating layer; depositing sequentially a second gate insulating layer, a pure semiconductor layer, a doped semiconductor layer and a second metal layer over the whole substrate; patterning the second metal layer using a second mask to form a data line, source and drain electrodes, a capacitor electrode, the capacitor electrode overlapping a portion of the gate line; etching the doped semiconductor layer between the source and drain electrodes to form a channel region; depositing a third insulating layer over the whole substrate; patterning the third insulating layer using a third mask to form a passivation film, the passivation film having a smaller width than the data line and covering the source and drain electrodes and exposing a portion of the drain electrode and the capacitor electrode; depositing a transparent conductive material layer over the whole substrate; and patterning the transparent conductive material layer using a fourth mask to pixel electrode, the pixel electrode contacting the drain electrode.

Thin-film transistor

A thin-film transistor includes a substrate and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by about 1 to 4 .mu.m. A method of making such a thin film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layer directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

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Kumi-shi, South Korea

Byung-chul Ahn