Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Lg Electronics Inc.

Lg.phillips Lcd Co., Ltd.

Byung-Chul Ahn

Byoung-Ho Lim

Chang-Wook Han

Hyun-Sik Seo

Joo-Soo Lim

Hong-Seok Choi

Hee-Young Kwack

Hyo-Uk Kim

Hyun-seok Hong

Hee-Dong Choi

Do-Sung Kim

Hyun-Kyu Lee

Seong-Moh Seo

Yoon-Heung Tak

Jun-Min Lee

Do-Hyung Kim

Woong-Kwon Kim

Tae-Shick Kim

Soon-Sung Yoo

Jeong-Hyun Kim

Nam-Yang Lee

Sang-Gul Lee

Shin-Han Kim

Sung-Joon Bae

Sung-Hoon Pieh

Hwa-Kyung Kim

Mi-Young Han

Se-Hee Lee

Kyoung-Nam Lim

Seok-Jong Lee

Seung-Ryong Joung

Seung-Hyun Kim

Ki-Hyun Lyu

Hee-Suk Pang

Yong-Wan Kim

Seung-Kyu Choi

Hyun-Seok Hong

Jae-Man Lee

Hong-Sik Kim

Byeong-Sun Yoo

Hyung-Gu Roh

Go-Tae Kim

Young-Hoon Ha

Woo-Chan Kim

Display devices and, in particular, electroluminescent display devices including a lower structure of a bank causing a highly conductive hole injection layer to take on a shape so as to reduce a leakage current, and a method for manufacturing the same are described. An electroluminescent display device includes a substrate having a plurality of pixels, a bank located at a boundary between the subpixels, a first electrode in each subpixel, a separation induction layer between the bank and the first electrode, a p-type layer with a first portion on the bank and a second portion on an emission assembly of the subpixels, and at least one common layer on the p-type layer.

Electroluminescent display device

A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 &#x3bc;m. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

Thin-film transistor and method of making same

An organic light emitting display device with enhanced luminous efficiency and color viewing angle and a method of manufacturing the same are disclosed. The method includes forming a first electrode of each of red, green, blue and white sub-pixels on a substrate, forming a white organic common layer on the first electrodes, and forming a second electrode on the white organic common layer, wherein the first electrodes each includes multiple transparent conductive layers and is formed such that a thickness of the first electrode of each of two sub-pixels among the red, green, blue and white sub-pixels is greater than a thickness of the first electrode of each of the other two sub-pixels, and at least two layers excluding the lowermost layer among the multiple transparent conductive layers of each first electrode are formed to cover opposite sides of the lowermost layer.

Organic light emitting display device and method of manufacturing the same

An organic light emitting display device is provided to avoid color change due to a viewing direction. The organic light emitting display includes a light compensation layer having a refractive index different than that of an insulating layer. The organic light emitting display may be disposed at the side to which light emitted from an organic light emitting layer is entered to change the path and phase of light, thereby coinciding cavity peak phases for each wavelength of white light emitted from an organic light emitting unit.

Organic light emitting display device

A monochrome light emitting display device and a method for fabricating the same are disclosed, in which a pixel structure of a monochrome light emitting display device is changed to improve a contrast ratio and resolution and at the same time color shift is prevented from occurring, so as to display clearer image. The monochrome light emitting display device comprises a display panel having unit pixels of first and second sub-pixels arranged in a matrix arrangement to display a monochrome image; gate and data drivers respectively driving gate lines and data lines of the display panel; and a timing controller aligning externally input RGB data to be suitable for driving of the display panel to supply the RGB data to the data driver and generating data and gate control signals to control the data and gate drivers.

Monochrome light emitting display device and method for fabricating the same

An array substrate for an IPS mode LCD device comprises a substrate; a gate line along a first direction; a data line along a second direction; a TFT connected to the gate and data lines; a common electrode having a plate shape on the substrate and formed of a first transparent conductive material; and a pixel electrode formed of a second transparent conductive material on the common electrode and including first and second portions and a plurality of third portions combining the first portion with the second portion. The first and second portions are parallel to the second direction and separated from each other and the plurality of third portions are oblique to the first and second portions and separated from one another.

Array substrate for in-plane switching mode liquid crystal display device and method of fabricating the same

A white organic light emitting device and a display device using the same to which a 2-peak spectrum is applied to execute white display comprises a first electrode and a second electrode disposed opposite each other on a substrate, and a blue light emitting unit and a phosphorescent light emitting unit provided between the first electrode and the second electrode, and a 2-peak white spectrum is formed through a first light emitting peak of the blue light emitting unit at a wavelength of 430 nm to 460 nm and a second light emitting peak of the phosphorescent light emitting unit at a wavelength of 530 nm to 630 nm.

White organic light emitting device and display device using the same

An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

Array substrate for liquid crystal display device and method of manufacturing the same

A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.

Method of forming inorganic insulating layer and method of fabricating array substrate for display device using the same

A method of fabricating an array substrate includes: forming a gate line and a gate electrode connected to the gate line; forming a gate insulating layer on the gate line and the gate insulting layer; sequentially forming an intrinsic amorphous silicon pattern and an impurity-doped amorphous silicon pattern on the gate insulating layer over the gate electrode; forming a data line on the gate insulating layer and source and drain electrodes on the impurity-doped amorphous silicon pattern, the data line crossing the gate line to define a pixel region, and the source and drain electrodes spaced apart from each other; removing a portion of the impurity-doped amorphous silicon pattern exposed through the source and drain electrodes to define an ohmic contact layer; irradiating a first laser beam onto the intrinsic amorphous silicon pattern through the source and drain electrode to form an active layer including a first portion of polycrystalline silicon and a second portion of amorphous silicon at both sides of the first portion; forming a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer in the pixel region, the pixel electrode connected to the drain electrode through the drain contact hole.

Array substrate including thin film transistor and method of fabricating the same

A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.

Method of fabricating array substrate

An array substrate for a liquid crystal display device includes a substrate, a gate line over the substrate, a data line crossing the gate line to define a pixel region and including a transparent conductive layer and an opaque conductive layer, a data pad at one end of the data line and including a transparent conductive layer, a thin film transistor connected to the gate line and the data line and including a gate electrode, an active layer, an ohmic contact layer, a buffer metallic layer, a source electrode and a drain electrode, and a pixel electrode in the pixel region and connected to the thin film transistor, the pixel electrode including a transparent conductive layer.

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Seoul, South Korea

Byung-Chul Ahn