Lg Semicon Co., Ltd.

Byung Chan Kim

Hyun Jo Yang

A halftone phase shift mask includes a substrate, a first light-shielding layer formed in one region of the substrate for shielding light between a plurality of key patterns, and a second light-shielding layer formed in another region of the substrate for shielding light between a plurality of cell patterns, whereby a generation of sidelobe is prevented. A method of manufacturing a phase shift mask includes forming a first light-shielding layer on one region of a substrate, forming a second light-shielding layer on another region of the substrate and on the first light-shielding layer, and patterning the first and second light-shielding layers to thereby form a plurality of cell patterns and key patterns.

Growing community of inventors

Kyungki-do, South Korea

Byung Chan Kim