Samsung Electronics Co., Ltd.

Byounggi Kim

Taeyong Kwon

Junghan Lee

Kihwan Lee

Minchul Sun

Suhyeon Park

A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Growing community of inventors

Suwon-si, South Korea

Byounggi Kim