Samsung Electronics Co., Ltd.

Byoung-taek Kim

Yong-Seok Kim

Ji-Ho Cho

Won-Bo Shim

Sun-gyung Hwang

Tae Hun Kim

Kyunghwan Lee

Yongseok Kim

Junhee Lim

Dongkyun Seo

Sang-hak Kim

Chung-sik Bang

A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Nonvolatile memory device and program method of the same

A three-dimensional semiconductor memory device includes an electrode structure including gate electrodes and insulating layers, which are alternately stacked on a substrate, a semiconductor pattern extending in a first direction substantially perpendicular to a top surface of the substrate and penetrating the electrode structure, a tunnel insulating layer disposed between the semiconductor pattern and the electrode structure, a blocking insulating layer disposed between the tunnel insulating layer and the electrode structure, and a charge storing layer disposed between the blocking insulating layer and the tunnel insulating layer. The charge storing layer includes a plurality of first charge trap layers having a first energy band gap, and a second charge trap layer having a second energy band gap larger than the first energy band gap. The first charge trap layers are embedded in the second charge trap layer between the gate electrodes and the semiconductor pattern.

Three-dimensional semiconductor memory device

A caster includes a fixing portion installed on a bottom surface of an object, a wheel portion which is installed to be elevated into a flange portion and has a moving wheel provided on a bottom surface of the wheel portion, and an elevating portion to control the wheel portion to elevate into the flange portion. The wheel portion descends from the fixing portion to move the object and elevates into the fixing portion to fixedly dispose the object in a position. Therefore, a height of the caster is controlled to be high when the heavy object is being moved, and controlled to be low when fixing the object in a position, thus improving the appearance of the object.

Caster

An integrated remote controller/wireless mouse includes first and second buttons installed on the upper surface of a body for operating first and second apparatuses, respectively, a signal generator for generating optical signals for controlling functions of the apparatuses in accordance with the operation of the buttons, and a track ball, protruding from the bottom surface of the body, to allow free rolling movement for operating the second apparatus.

Remote controller integrated with wireless mouse

Growing community of inventors

Hwaseong-si, South Korea

Byoung-taek Kim