Samsung Electronics Co., Ltd.

Ajou University Industry-academic Cooperation Foundation

Sungkyunkwan University

Samsung Led Co., Ltd.

Byoung-lyong Choi

Eun-kyung Lee

Tae-ho Kim

Kyung-sang Cho

Jun-Young Kim

Dong-mok Whang

Eun-Kyung Lee

Jun-young Kim

Young-Gu Jin

Jong-seob Kim

Seung-nam Cha

Sung-hoon Lee

Hyo-sug Lee

Jae-ho You

Byung-Sung Kim

Jae-hyun Lee

Sun-il Kim

Seung-Ho Nam

Sang-jin Lee

Sang-wook Kim

Dae-young Chung

Dong-hyeok Choi

Jae-Ho Lee

Seung-wan Lee

Wan-jun Park

Kyoung-ho Ha

Chang-won Lee

Shang-hyeun Park

Jun-hee Choi

Pil-soo Ahn

Won-Jae Joo

O-Gweon Seo

In-Jae Song

Seung-ho Nam

Young-jin Song

Young-Jin Song

Jong-woon Lee

Sun-hwak Woo

Jao-woong Hyun

Choong-ho Yu

Provided are nanoparticles passivated with a cationic metal-chalcogenide complex (MCC) and a method of preparing the same. A passivated nanoparticle includes: a core nanoparticle; and a cationic metal-chalcogenide compound (MCC) fixed on a surface of the core nanoparticle.

Nanoparticles passivated with cationic metal-chalcogenide compound

A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.

Graphene structure and method of manufacturing the same

A varifocal lens including a first liquid crystal layer; a first electrode portion disposed below the first liquid crystal layer and having a flat shape; a first non-uniform electric field generator which generates a non-uniform electric field in the first liquid crystal layer together with the first electrode portion, and the first non-uniform electric field generator including a second electrode portion having a flat shape.

Varifocal lens

A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Flexible semiconductor devices and methods of manufacturing the same

A method of manufacturing nanoparticles including: providing a metal chalcogenide complexes (MCC) hydrazine hydrate solution; providing a first organic solution of nanoparticles with first organic ligands; forming a mixed solution by mixing the MCC hydrazine hydrate solution and the first organic solution of nanoparticles capped with the first organic ligands; and replacing the first organic ligands of the nanoparticles with ligands of the MCC hydrazine hydrate.

Nanoparticles and methods of manufacturing the same

According to example embodiments, a wire structure includes a first wire that includes a first wire core and a first carbon shell surrounding the first wire core, and a second wire that extends in a longitudinal direction from the first wire. The first wire core has a wire shape. The first carbon shell contains carbon.

Wire structure and semiconductor device having the same, and method of manufacturing the wire structure

Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Porous nanostructure and method of manufacturing the same

A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device

A composite structure of graphene and polymer and a method of manufacturing the complex. The composite structure of graphene and polymer includes: at least one polymer structure having a three-dimensional shape; and a graphene layer formed on the at least one polymer structure.

Composite structure of graphene and polymer and method of manufacturing the same

A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.

Graphene-polymer layered composite and process for preparing the same

A varifocal lens including a first liquid crystal layer; a second liquid crystal layer disposed below the first liquid crystal layer; a common electrode disposed between the first liquid crystal layer and the second liquid crystal layer; a first electrode disposed above the first liquid crystal layer and having a curved shape; and a second electrode disposed below the second liquid crystal layer and having a curved shape.

A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a sacrificial layer, and a quantum dot layer on a source substrate; disposing a stamp on the quantum dot layer; picking up the sacrificial layer, the quantum dot layer and the stamp; and removing the sacrificial layer from the quantum dot layer using a solution that dissolves the sacrificial layer.

Method of manufacturing quantum dot layer and quantum dot optoelectronic device including the quantum dot layer

An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.

Optoelectronic devices

A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.

Thermoelectric device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Byoung-lyong Choi