Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Byoung-Kyu Lee

Seung-Jae Jung

Czang-Ho Lee

Myung-Hun Shin

Yuk-Hyun Nam

Joon-Young Seo

Min-Seok Oh

Mi-Hwa Lim

Min Cheol Park

Byoung-June Kim

Dong-Uk Choi

Jung-Tae Kim

Ku-Hyun Kang

Dong-Seop Kim

Yun-Seok Lee

Nam-Kyu Song

Dong-Jin Kim

Changwon Lee

Jeonggil Lee

Hauk Han

Se-Jin Chung

Jin-Seock Kim

Je-hyeon Park

Yeon-Il Kang

Joong-Hyun Park

Dae-Ha Woo

Jingi Hong

Eungjoon Lee

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Method of manufacturing photoelectric conversion device

Photoelectric conversion device and manufacturing method thereof

A solar cell module includes a substrate, a lower electrode layer, a semiconductor layer and an upper electrode layer for an embodiment. The lower electrode layer may include a plurality of area-separating grooves separating the substrate into an active area and a peripheral area surrounding the active area, and a plurality of first cell-separating grooves formed in the active area. The semiconductor layer is formed on the lower electrode layer. The semiconductor layer includes a plurality of second cell-separating grooves that are spaced apart from the first cell-separating grooves. The upper electrode layer is formed on the semiconductor layer. The upper electrode layer includes a plurality of third cell-separating grooves that are spaced apart from the second separating grooves.

Solar cell module and method of manufacturing the same

Semiconductor devices and methods of fabricating semiconductor devices that may include forming an insulation structure including insulation patterns that are sequentially stacked and vertically separated from each other to provide gap regions between the insulation patterns, forming a first conductive layer filling the gap regions and covering two opposite sidewalls of the insulation structure, and forming a second conductive layer covering the first conductive layer. A thickness of the second conductive layer covering an upper sidewall of the insulation structure is greater than a thickness of the second conductive layer covering a lower sidewall of the insulation structure.

Semiconductor devices having stacked structures and a layer formed thereon tapered in direction opposite of a tapering of the stacked structures and methods of fabricating the same

A solar cell includes: a semiconductor substrate having a first surface and a second surface opposite the first surface; uneven patterns disposed on at least one of the first surface and the second surface of the semiconductor substrate; a first impurity layer disposed on the uneven patterns and which includes a first part having a first doping concentration and a second part having a second doping concentration greater than the first doping concentration; and a first electrode which contacts the second part of the first impurity layer and does not contact the first part of the first impurity layer.

Solar cell and method of fabricating the same

Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Method of manufacturing photovoltaic device

A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.

Photovoltaic device and method for manufacturing the same

In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

Method of manufacturing photoelectric device

A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.

Transparent conductive layer and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Byoung-Kyu Lee