Samsung Display Co., Ltd.

Ubmaterials Inc.

Byoung-Kwon Choo

Yong-Hwan Park

Sang-Ho Moon

Kyu-Sik Cho

Joon-Hoo Choi

Tae-Hoon Yang

Won-Kyu Lee

Min-Chul Shin

Bo-Kyung Choi

Yun-Gyu Lee

Cheol-Ho Park

Hee-Geun Son

Joo-Woan Cho

Byoung-Ho Cheong

Kwon-Hyung Lee

Do-Yeob Kim

In-Sun Hwang

Seung-Kyu Park

Hyun-Been Hwang

Joon-Hwa Bae

Jin-Hyung Park

Sung-Chul Pyo

Jong-Hyun Yun

Sang-Hoon Ahn

Jeong-Kyun Na

Eun-Cheol Kim

Hyun-Jin Cho

Soo-Yeon Han

A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.

Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate

An apparatus for crystallizing an active layer of a thin film transistor, the apparatus includes a first laser irradiating a first beam toward a substrate, an amorphous layer on the substrate being crystallizable into the active layer of the thin film transistor by the first beam, and a second laser irradiating a second beam toward the substrate to heat the active layer, the second beam having an asymmetric intensity profile in a scanning direction of the first and second beams.

Apparatus for and method of crystallizing active layer of thin film transistor

An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Organic light emitting diode display

A method of controlling a laser beam annealing apparatus to manufacture a thin film transistor substrate, the method including: irradiating a laser beam emitted from a laser beam irradiator onto an amorphous silicon layer on a substrate supported by a substrate support; obtaining photographic data with respect to at least a part of the substrate by using a photographic unit; and adjusting a position of at least one of the substrate support or the laser beam irradiator by using a position adjuster based on the photographic data obtained by the photographic unit.

Method of controlling a laser beam annealing apparatus to manufacture thin film transistor substrate

An apparatus for inspecting crystallization includes a substrate including a semiconductor layer, the semiconductor layer includes a plurality of crystallized regions separated from each other; a stage configured to change a position of the substrate, the substrate being seated thereon; a photographing unit configured to acquire image data regarding the semiconductor layer; an inspection unit configured to obtain inspection data regarding the semiconductor layer; and a control unit configured to output change data regarding a change in the position of the substrate according to the image data acquired by the photographing unit.

Apparatus and method for inspecting crystallization

An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

Method of manufacturing organic light emitting diode display

A laser annealing apparatus includes a lens unit configured to transmit a laser beam to be irradiated onto an irradiation target; a lens unit housing accommodating the lens unit and having an opening configured to allow the laser beam to pass through the opening; a blocking plate configured to block at least a portion of the laser beam reflected by the irradiation target after being transmitted through the lens unit to the irradiation target; and a cooling unit between the blocking plate and the lens unit housing.

Laser annealing apparatus

An organic light emitting diode (OLED) display device and a method of fabricating the same are disclosed. The OLED display device includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels disposed in a region in which the scan lines cross the data lines, where each pixel of the plurality of pixels includes: a switching transistor including a first gate electrode, a first semiconductor layer disposed over the first gate electrode, a first gate insulating layer interposed between the first gate electrode and the first semiconductor layer, a first source electrode and a first drain electrode, a driving transistor including a second semiconductor layer, a second gate electrode disposed over the second semiconductor layer, a second gate insulating layer interposed between the second gate electrode and the second semiconductor layer, a second source electrode and a second drain electrode, and an organic light emitting diode electrically connected with the second source and second drain electrodes of the driving transistor, where the first and second semiconductor layers are formed of the same material, and from the same processing.

Organic light emitting diode display device and method of fabricating the same

A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.

Thin film transistor and organic light emitting display device having the same

Laser crystallization equipment includes a laser generator generating a laser beam, the laser beam being directed toward a processing target substrate, and a blade member over the processing target substrate, the blade member being configured to chop the laser beam with a predetermined width in two directions, wherein two ends of the laser beam chopped by the blade member are irradiated to the processing target substrate as diffraction light.

Laser crystallization apparatus and method for manufacturing thin film transistor array panel using the same

Organic light emitting diode display device and manufacturing method thereof

A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern.

Thin film transistor including an active layer pattern, method of manufacturing the same, and organic light emitting display apparatus

A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics

An organic light emitting display and method of fabricating thereof, the display including a substrate including a first thin film transistor region and a second thin film transistor region; a buffer layer on the substrate; a first and a second semiconductor layer on the buffer layer; a gate insulating layer on the substrate; gate electrodes on the gate insulating layer and corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrode and being connected to the first semiconductor layer and the second semiconductor layer, respectively; an insulating layer on the substrate; a first electrode connected to the source/drain electrode electrically connected to the first semiconductor layer; an organic layer on the first electrode; and a second electrode on the organic layer, wherein portions of the buffer layer corresponding to a source/drain region of the first semiconductor layer include a metal catalyst.

Organic light emitting display and method of fabricating the same

An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

Growing community of inventors

Yongin, South Korea

Byoung-Kwon Choo