Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Byoung Kwon Ahn

Dong Su Park

Nam Kyeong Kim

Ki Seon Park

Sung Hoon Park

Joon Ho Kim

Seung Kyu Han

Dong Soo Park

Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of TaO(X)YO(1&#x2212;X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the TaO(X)YO(1&#x2212;X) single composite film to the dielectric film.

Method for forming capacitor of semiconductor device

In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Method for forming capacitor of nonvolatile semiconductor memory device

A method for fabricating capacitor capable of simplifying formation processes of ruthenium (Ru) layer for storage node electrode formation of capacitor comprises the steps of: forming a first insulating layer having a first opening exposing a predetermined region on a substrate; forming a conductive plug filled within the first opening; forming a second insulating layer having a second opening exposing the conductive plug on the first insulating layer; forming a conductive layer covering the second opening by sequentially performing PECVD and LPCVD processes on the second insulating layer; exposing the second insulating layer by performing etch back on the conductive layer; forming a storage node electrode of the capacitor by removing the second insulating layer; and forming a dielectric layer to cover the storage node electrode; and forming a plate electrode. In an alternative embodiment, a thermal treatment under an N gas supply is performed after the step of forming the conductive layer.

Method for fabricating a capacitor

In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al O film is formed over the TaON film, and an upper electrode is formed over the Al O film.

Capacitor in semiconductor device

A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.

Method for manufacturing a capacitor for semiconductor devices

A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on the semiconductor substrate, a Y O film formed on the first Ru film, a TiON film formed on the Y O film, and a second Ru film formed on the TiON film; and the method for fabricating a capacitor in a semiconductor device comprising the steps of: providing a semiconductor substrate, forming a first Ru film on the semiconductor substrate, forming a Y O film on the first Ru film, forming a TiON film on the Y O film, and forming a second Ru film on the TiON film.

Method for fabricating capacitor in semiconductor device and capacitor fabricated thereby

Nonvolatile semiconductor memory device

In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al O film is formed over the TaON film, and an upper electrode is formed over the Al O film.

Growing community of inventors

Seoul, South Korea

Byoung Kwon Ahn