Ls Mtron Ltd.

Lg Innotek Co., Ltd.

Kcf Technologies Co., Ltd.

Byoung-Kwang Lee

Dae-Young Kim

Seung-Jun Choi

Jae-Hoon Kim

Joon-Mo Seo

Byoung-Un Kang

Tae-Hyun Sung

Kyung-Tae Wi

Soon-Young Hyun

Chan-Young Choi

A copper foil for a current collector of a lithium secondary battery has a crystalline structure, in which a ratio of the sum of texture coefficients of a (111) surface and a (200) surface to the total sum of texture coefficients of the (111), (200) and (220) surfaces is 60 to 85%, a ratio of the texture coefficient of the (111) surface to the total sum of texture coefficients of the (111), (200) and (220) is 18 to 38%, a ratio of the texture coefficient of the (200) surface thereto is 28 to 62%, and a ratio of the texture coefficient of the (220) surface thereto is 15 to 40%. The copper foil has surface roughness (Rz-JIS) of 2 mum or less, weight deviation of 3% or less, tensile strength of 30 to 40 kgf/mm2, elongation of 3 to 20%, and thickness of 1 to 35 mum.

Copper foil for current collector of lithium secondary battery with improved wrinkle characteristics

A copper foil for a current collector of a lithium secondary battery has a crystalline structure, in which a ratio of the sum of texture coefficients of a () surface and a () surface to the total sum of texture coefficients of the (), () and () surfaces is 60 to 85%, a ratio of the texture coefficient of the () surface to the total sum of texture coefficients of the (), () and () is 18 to 38%, a ratio of the texture coefficient of the () surface thereto is 28 to 62%, and a ratio of the texture coefficient of the () surface thereto is 15 to 40%. The copper foil has surface roughness (R-JIS) of 2 &#x3bc;m or less, weight deviation of 3% or less, tensile strength of 30 to 40 kgf/mm, elongation of 3 to 20%, and thickness of 1 to 35 &#x3bc;m.

A dicing die attachment film includes a die attachment layer attached to one surface of a semiconductor wafer; a dicing film layer attached to a dicing die that is used for cutting the semi-conductor wafer into die units; and an intermediate layer laminated between the die attachment layer and the dicing film layer. The intermediate layer has a modulus of 100 to 3000 MPa, which is greater than a modulus of the die attachment layer and the dicing film layer.

Dicing die attachment film and method for packaging semiconductor using same

Growing community of inventors

Gyeonggi-do, South Korea

Byoung-Kwang Lee