Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Intellectual Keystone Technology LLC

Byoung-June Kim

Sung-Hoon Yang

Jae-Ho Choi

Yong-Mo Choi

Hwa-Yeul Oh

Czang-Ho Lee

Min-Seok Oh

Seung-Jae Jung

Myung-Hun Shin

Byoung-Kyu Lee

Joon-Young Seo

Min Cheol Park

Chang-Oh Jeong

Je-Hun Lee

Do-Hyun Kim

Dong-Uk Choi

Yuk-Hyun Nam

Mi-Hwa Lim

Kap-Soo Yoon

Sung-Ryul Kim

Jung-Tae Kim

Dong-Seop Kim

Yun-Seok Lee

Nam-Kyu Song

Kunal Girotra

Jong-Moo Huh

Kyu-Sik Cho

Se-Jin Chung

Ku-Hyun Kang

Jin-Seock Kim

Joo-Hoo Choi

Girotra Kunal

Dong-seop Kim

Dong Choi

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Method of manufacturing photoelectric conversion device

A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280&#xb0; C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Thin film transistor array panel and method for manufacturing the same

Photoelectric conversion device and manufacturing method thereof

A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cmto about 0.3 mole/cmof a 3d transition metal; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode disposed on the semiconductor layer. Also described is a display substrate. The metal oxide has oxygen defects of less than or equal to 3%, and is doped with about 0.01 mole/cmto about 0.3 mole/cmof 3d transition metal. The metal oxide comprises indium oxide or titanium oxide. The 3d transition metal includes at least one 3d transition metal selected from the group consisting of chromium, cobalt, nickel, iron, manganese, and mixtures thereof.

Thin film transistor substrate, display device having the same and method of manufacturing the display device

Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.

Method of manufacturing photovoltaic device

A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.

Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same

The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.

Thin film transistor, organic light emitting device including thin film transistor, and manufacturing method thereof

In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.

Method of manufacturing photoelectric device

A manufacturing method for a flat panel display device includes forming a barrier layer on a flexible plastic substrate by RF sputtering, forming an amorphous silicon layer on the plastic substrate, and subjecting the amorphous silicon layer to a rapid heat treatment so as to thereby improve electrical characteristics and/or homogeneity of the amorphous silicon layer.

Flexible display device having enhanced thin film semiconductive layer and method of manufacture

A method of manufacturing a silicon layer includes pretreating a surface of a silicon nitride layer formed on a substrate through a plasma enhanced chemical vapor deposition method using a first reaction gas including at least one of silicone tetrafluoride (SiF) gas, a nitrogen trifluoride (NF) gas, SiF&#x2014;Hgas and a mixture thereof. Then, a silicon layer is formed on the pretreated silicon nitride layer through the plasma enhanced chemical vapor deposition method using a second reaction gas including a mixture of gas including silicon tetrafluoride (SiF), hydrogen (H) and argon (Ar).

Method of forming a silicon layer and method of manufacturing a display substrate by using the same

A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first hydrogen plasma treatment with respect to the gate insulating layer; forming a first active layer with a first thickness at a first deposition rate on the gate insulating layer; performing a second hydrogen plasma treatment with respect to the first active layer; and forming a second active layer with a second thickness greater than the first thickness at a second deposition rate greater than the first deposition rate, on the first active layer.

Method of fabricating thin film transistor substrate and thin film transistor substrate produced using the same

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Seoul, South Korea

Byoung-June Kim