Samsung Electronics Co., Ltd.

Byoung-Jae Bae

Sung-lae Cho

Jin-il Lee

Hye-Young Park

Soeng-hun Kim

Gert Jan Van Lieshout

Soeng-Hun Kim

Young-Lim Park

Dong-Hyun Im

Jun-Sung Lee

Sung-Man Han

Ji-Eun Lim

Ik-Soo Kim

Jong-Chul Park

Gyu-Hwan Oh

Doo-Hwan Park

Do-hyung Kim

Moon-Sook Lee

Sang-sup Jeong

Sung-Un Kwon

Chul-Ho Shin

Shin-Jae Kang

Sung-Lae Cho

Yang-Ick Joo

Jang-Eun Heo

Hye-young Park

Young-Seok Choi

Dong-chul Yoo

Kyoung-Ha Eom

Ki-Nam Kim

I-hun Song

Suk-Pil Kim

Hye-Jeong Kim

Byung-Gil Jeon

Young-Soo Park

Se-Chung Oh

June-mo Koo

Jeong-Heon Park

Yun-Sang Park

Jeong-Hee Park

Byoung-Deog Choi

Sang-min Shin

Jae-Ho Song

Choong-Man Lee

Young-Taek Kim

Kang-yong Lee

Do-Young Lee

Hyun-Gu Lee

Heung-Jin Joo

Seong-Joon Kim

Chan-Young Kim

Byeong-Yun Lee

Chung-Ho Shin

Woon-Haing Hur

Jin-Il Lee

Young-Bae Choi

Gert-Jan Van Lieshout

A method for operating a terminal in a wireless communication system is provided. The method includes decoding data which is received data or combined data, in case that the data is successfully decoded, determining whether the decoding of the data is a first successful decoding, and, in case that the decoding of the data is the first successful decoding, delivering the decoded data to a disassembly and demultiplexing entity.

Operating method and apparatus according to data duplicate retransmission in mobile communication system

An operating method and an apparatus according to data duplicate retransmission in a mobile communication system are provided. A method of a User Equipment (UE) according to data duplicate retransmission in a mobile communication system includes storing a Media Access Control Protocol Data Unit (MAC PDU) received from an Evolved Node B (ENB) in a soft buffer, decoding the MAC PDU, determining whether the decoding is a first successful decoding of data of the corresponding soft buffer, and determining whether to forward the decoded MAC PDU to an upper layer according to the determination result.

In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Magnetoresistive random access memory device

A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.

Method of fabricating memory device

The present invention relates to a method for identifying a microcell in a macrocell including the steps of: a User Equipment (UE) obtaining a physical identity of the microcell by performing cell search on an adjoining microcell; and the UE identifying the microcell by using a specific pattern of a sub-frame transmitted by the microcell.

Method and apparatus for identifying microcells in macrocells in wireless communication systems, and handover method and system using same

Magnetoresistive random access memory device and method of manufacturing the same

A method and apparatus of searching for an operator network in a multi-Radio Access Technology (RAT) environment are provided. The method, calculating a length of a sleep interval to perform background Public Land Mobile Network (PLMN) searching, comparing the length of the sleep interval with a predetermined reference parameter, if the length of the sleep interval is larger than the reference parameter, performing background PLMN searching of a passive RAT during the sleep interval, and if the length of the sleep interval is equal to or smaller than the reference parameter, performing background PLMN searching of an active RAT during the sleep interval.

Method and apparatus of searching for operator network in a multi-radio access technology environment

In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

A system and a method for handover of a terminal in a wireless communication system are provided. The method includes transmitting, by a serving BS, measurement control information and DRX control information to a terminal; measuring, by the terminal, a channel, based on the measurement control information; operating, by the terminal, in connected DRX, based on the DRX control information; reporting, by the terminal, channel measurement information to the serving BS; determining, by the serving BS, the handover of the terminal based on the channel measurement information provided from the terminal; resetting, by the serving BS, the DRX control information of the terminal; transmitting, by the serving BS, the reset DRX control information to the terminal; operating, by the terminal, in the connected DRX, based on the reset DRX control information provided from the serving BS; and transmitting, by the serving BS, handover indication information to the terminal.

System and method for handover in wireless communication system

A conductive pattern on a substrate is formed. An insulating layer having an opening exposing the conductive pattern is formed. A bottom electrode is formed on the conductive pattern and a first sidewall of the opening. A spacer is formed on the bottom electrode and a second sidewall of the opening. The spacer and the bottom electrode are formed to be lower than a top surface of the insulating layer. A data storage plug is formed on the bottom electrode and the spacer. The data storage plug has a first sidewall aligned with a sidewall of the bottom electrode and a second sidewall aligned with a sidewall of the spacer. A bit line is formed on the data storage plug.

Method of forming semiconductor device having self-aligned plug

A phase change memory device includes an impurity region on a substrate, the impurity region being in an active region, a metal silicide pattern at least partially buried in the impurity region, a diode on the impurity region, a lower electrode on the diode, a phase change layer pattern on the lower electrode, and an upper electrode on the phase change layer pattern.

Phase change memory devices having buried metal silicide patterns

Growing community of inventors

Suwon-si, South Korea

Byoung-Jae Bae