Samsung Electronics Co., Ltd.

Ajou University Industry Cooperation Foundation

Byoung Hoon Lee

Sang Jin Hyun

Jong Ho Park

Wan Don Kim

Jeong Hyuk Yim

We Duke Cho

Jai Hoon Kim

Sung Hwa Lim

Hyeon Jun Baek

Chan Hyeong Lee

Weon Hong Kim

Jung Min Park

Dong Wook Lee

Jae-Jung Kim

Min Woo Song

Hoon Joo Na

Sang Yong Kim

Yong Ho Ha

Sung In Suh

Hu Yong Lee

Kug Hwan Kim

Hye Ri Hong

A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.

Semiconductor device

A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Semiconductor device including work function adjusting metal gate structure

A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

A semiconductor device according to an example embodiment of the present inventive concept includes a substrate having a first region and a second region horizontally separate from the first region; a first gate line in the first region, the first gate line including a first lower work function layer and a first upper work function layer disposed on the first lower work function layer; and a second gate line including a second lower work function layer in the second region, the second gate line having a width in a first, horizontal direction equal to or narrower than a width of the first gate line in the first direction, wherein an uppermost end of the first upper work function layer and an uppermost end of the second lower work function layer are each located at a vertical level higher than an uppermost end of the first lower work function layer with respect to a second direction perpendicular to the first direction.

Semiconductor devices

A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

Semiconductor device and method for fabricating the same

There is provided a ubiquitous monitoring system comprising a plurality of sensing nodes; one or more monitoring agents receiving and transmitting sensing data of the sensing nodes; a monitoring module receiving the sensing data from the one or more monitoring agents and managing the sensing data for each type and time; an analysis module deducing one of function information, performance information, and status information for each of smart objects in a ubiquitous space, based on the sensing data, deducing one of function information, performance information, and status information of a ubiquitous service performed by coupled smart objects, and transmitting a result of deduction; and a monitoring viewer displaying the result of deduction to a user.

Ubiquitous monitoring system capable of performing integral monitoring for smart objects

There is provided a ubiquitous monitoring system comprising a plurality of sensor nodes, one or more agent adapters receiving sensing data from the plurality of sensor nodes and determining to where the sensing data is transmitted according to one of characteristics of the plurality of sensing nodes and characteristics of the sensing data, one or more first monitoring agents receiving the sensing data from the agent adapter, one or more second monitoring agents receiving the sensing data from one of the agent adapter and the first monitoring agent, one or more third monitoring agents receiving the sensing data from one of the agent adapter and the second monitoring agent, and a monitoring engine receiving the sensing data from the third monitoring agent and monitoring the received sensing data.

Ubiquitous monitoring system

Growing community of inventors

Suwon-si, South Korea

Byoung Hoon Lee