Lg Display Co., Ltd.

Lg Philips Lcd Co., Inc.

Byoung Ho Lim

Byung Chul Ahn

Jae Jun Ahn

Dong Yeung Kwak

Soon Sung Yoo

Heung Lyul Cho

Hong Sik Kim

Byeong Dae Choi

Hyun Sik Seo

Chul Nam

Jong Woo Park

Jae Gu Lee

Seong Hee Kim

Gyu Bong Kim

Jong Woo Kim

Jae Young Oh

Seung Hee Nam

Youn Gyoung Chang

Jin Ho Kim

Hee Young Kwack

Cheol Se Kim

Woo Hyuk Choi

Jae Hyung Jo

Kwang Sik Oh

Kyo Ho Moon

Yong Soo Cho

Eung Do Kim

Hye Young Kim

Bo Ram Kim

Chang Deok Lee

Chan Ki Ha

Hee Chun Boo, Legal Representative

Min Jae Lee

Chan Hee Hong

A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.

Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof

A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.

Thin film transistor array substrate and method of fabricating the same

Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area.

Liquid crystal display device and fabricating method thereof

A liquid crystal display device having first and second substrates; a gate line on the first substrate; a data line crossing the gate line to define a pixel area, the gate line and the data line having a gate insulating film there between; a thin film transistor including a gate electrode, a source electrode, a drain electrode and a semiconductor layer for defining a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extended from the common line in the pixel area; and a pixel electrode spaced apart from the common line and the common electrode in the pixel area to be defined in a pixel hole passing through the gate insulating film, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode, and wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode to be connected to the pixel electrode.

An LCD include a gate line, a first data line and a second data line arranged to cross each other, thereby defining a unit pixel region, a TFT disposed at a region where the gate line, the first data line and the second data line cross, and having a passivation layer on an exposed channel layer, a common line disposed in parallel to the gate line, a first storage electrode integrally formed with the common line for forming a storage capacitance in the unit pixel region, a second storage electrode disposed to overlap with the first storage electrode, common electrodes branched from the first storage electrode and disposed at the unit pixel region, and pixel electrodes branched from the second storage electrode and alternately disposed with the common electrodes.

Liquid crystal display device

A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer, and an ohmic contact layer formed on the active region, wherein the source and drain electrodes are formed on the ohmic contact layer.

Array substrate of liquid crystal display and method for fabricating the same

A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel electrode formed of a transparent conductive film in a pixel hole passing through the gate insulating film in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source and drain metal pattern including the data line, the source electrode and the drain electrode; and wherein the drain electrode protrudes from the semiconductor layer toward inside of the pixel electrode to be connected to the pixel electrode.

A liquid crystal display using horizontal electric field and a method of fabricating the liquid crystal display device that are capable of reducing the number of mask processes are provided. The liquid crystal display of horizontal electric field applying type has a thin film transistor array substrate, with a conductive film connected to a gate pad, s data pad and a common pad of a thin film transistor on the substrate. The pads are exposed on the thin film transistor array substrate.

Liquid crystal display of horizontal electric field applying type and fabricating method thereof

A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.

Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof

A fringe field switching liquid crystal display panel capable of increasing throughput by forming a gate electrode together with a pixel electrode at the lowermost layer to reduce the deposition height of a passivation film to a thickness of a gate insulation film such that particles generated during the deposition of the passivation film may be reduced, and a method for manufacturing the fringe field switching liquid crystal display panel are disclosed. The panel includes a gate line formed on a substrate; a pixel electrode formed on the same layer as the gate line; a gate insulation film for covering the gate line and pixel electrode; a data line formed to intersect with the gate line and having the gate insulation film arranged between the data line and gate line; a passivation film formed on the gate insulation film to cover a thin film transistor; and a common electrode formed to overlap the pixel electrode with the gate insulation film and passivation film arranged between the common electrode and the pixel electrode.

Liquid crystal display panel and method for manufacturing the same

A TFT array substrate is fabricated in a reduced number of processes. The TFT array substrate includes gate and data pads with enlarged contact areas to facilitate contact with an inspecting pin of an inspection device. An LCD incorporating the TFT array substrate is inspected by contacting the inspecting pin to the gate and data pads. The TFT array substrate includes first, second, and third conductive pattern groups. The first conductive pattern group includes a gate electrode, a gate line, and a lower gate pad electrode. The second conductive pattern group includes source and drain electrodes, a data line, and a lower data pad electrode. The third conductive pattern group includes a pixel electrode, and upper gate and data pad electrodes. A semiconductor pattern is along and beneath the second conductive pattern group. Gate insulating and protective film patterns are at areas not occupied by the third conductive pattern group.

Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display

An LCD include a gate line, a first data line and a second data line arranged to cross each other, thereby defining a unit pixel region, a TFT disposed at a region where the gate line, the first data line and the second data line cross, and having a passivation layer on an exposed channel layer, a common line disposed in parallel to the gate line, a first storage electrode integrally formed with the common line for forming a storage capacitance in the unit pixel region, a second electrode disposed to overlap with the first storage electrode, common electrodes branched from the first storage electrode and disposed at the unit pixel region, and pixel electrodes branched from the second storage electrode and alternately disposed with the common electrodes.

Liquid crystal display device and method of manufacturing the same

An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and an ohmic contact film formed on the semiconductor film. A plurality of data lines cross the gate lines; a source electrode is formed on the ohmic contact film; and a pixel electrode is formed in a pixel region defined by the gate and data lines. A drain electrode is formed on the ohmic contact film, and has an uneven width. Since a portion of drain electrode that overlaps with the gate electrode has a smaller width than a width of other portions of the drain electrode, variation in an area of the drain electrode overlapped with the gate electrode is small, so that variation of the parasitic capacitance can be reduced, thereby improving picture quality.

Growing community of inventors

Kyoungsangbuk-do, South Korea

Byoung Ho Lim