Wonik Ips Co., Ltd.

Byoung Guk Son

Seung Han Lee

Jeong Min Lee

Jin Pil Heo

Sung Ho Roh

Chang Hee Han

Tae Ho Jeon

Sung Ho Jeon

Woo Young Park

Ja Hyun Koo

Yeong Taek Oh

Sung Eun Lee

The present invention provides a substrate processing apparatus including: a process chamber having a process space in which a substrate is processed; a substrate support including a susceptor having a plurality of pocket grooves recessed in a circumferential direction from a top surface with a circular plate shape so that the substrate is seated, a shaft configured to rotate the susceptor, and a satellite seated in the pocket groove and on which the substrate is seated; and a gas injection unit disposed at an upper portion of the process chamber to face the substrate support, thereby injecting a process gas toward the substrate support.

Substrate processing apparatus

Provided are a substrate processing apparatus and a substrate processing method using the same and, more particularly, a substrate processing apparatus capable of controlling deposition of a reactive-metal-containing precursor in an exhaust line, and a substrate processing method using the same.

Substrate processing apparatus and substrate processing method using the same

Growing community of inventors

Osan-si, South Korea

Byoung Guk Son