Samsung Electronics Co., Ltd.

Byoung-Gi Kim

Jung Han Lee

Jin Sung Kim

Jong Pil Kim

Dae Won Ha

Jung Gun You

Tae Yong Kwon

Kihwan Lee

Yun Suk Nam

Ki Hwan Lee

Yeong Min Jeon

Sung Chul Park

Mirco Cantoro

Dong-hun Lee

Yeon-Cheol Heo

Hyung-suk Lee

Yun-il Lee

Sung Chui Park

Chang-Min Yoe

Seung-Chan Yun

A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.

Semiconductor device

A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Methods for manufacturing semiconductor devices

A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.

Semiconductor devices

Semiconductor device and method of fabricating the same

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Suwon-si, South Korea

Byoung-Gi Kim