Samsung Electronics Co., Ltd.

Byoung Geun Kim

Jooyoung Hwang

Byung-Ki Lee

Yonghwa Lee

Sangyoon Oh

Keunsan Park

An operation method of a storage device, which includes a nonvolatile memory device, includes receiving a first key-value (KV) command including a first key from an external host device; transmitting a first value corresponding to the first key from the nonvolatile memory device to the external host device as first user data, in response to the first KV command; receiving a second KV command including a second key, from the external host device; and performing a first administrative operation based on a second value corresponding to the second key, in response to the second KV command. The first KV command and the second KV command are KV commands of a same type.

Storage device and operation method thereof

A storage device includes a first non-volatile memory comprising a plurality of first banks having a plurality of first addresses and a second non-volatile memory comprising a plurality of second banks having a plurality of second addresses assigned to each according to different assignment policies, and a controller. The plurality of second addresses corresponds to the plurality of first addresses. The second non-volatile memory mirrors data items stored in the first addresses to store them in the second addresses. The controller is configured to receive a command from a host to control the first non-volatile memory and the second non-volatile memory. The controller provides a read command received from the host simultaneously to first and second non-volatile memories, and outputs to the host an earlier one between data provided from the first non-volatile memory and data provided from the second non-volatile memory based on the read command.

Storage device, method for operating the same, and storage system including storage devices

A memory system, comprises a nonvolatile memory comprising multiple memory cells, and a memory controller configured to control respective cell levels of the memory cells by assigning a logical address of each memory cell to one of multiple address groups according to a frequency with which the logical address has been accessed, determining a cell level for each address group, and controlling each memory cell to have the cell level of the address group to which its logical address is assigned.

Growing community of inventors

Seoul, South Korea

Byoung Geun Kim