Samsung Mobile Display Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Byoung Deog Choi

Sung Wook Jung

Jun Sin Yi

Ji Woon Im

Sun A Yang

Sung Hyung Hwang

Dae Chul Choi

Eun Jung Lee

Jun Sik Kim

Seung-Heon Lee

Ki Yong Lee

Ik Soo Kim

Hye Hyang Park

Ho Ryun Chung

Hyun Min Kim

Youn Chul Oh

Won Seok Kang

Byeong Ju Bae

Choong Youl Im

A semiconductor memory device and associated methods, the device including first and second lower conductive lines extending in a first direction; a first middle conductive line on the first and second lower conductive lines and extending in a second direction; first and second memory cells between the first and second lower conductive lines and the first middle conductive line; an air gap support layer between the first and second memory cells; and a first air gap between the first and second memory cells and under the air gap support layer, wherein an upper surface of the air gap support layer lies in a same plane as the first and second memory cells, the first and second memory cells include first and second OTS layers and first and second phase-change layers, and the first air gap overlaps the first and second phase-change layers.

Semiconductor memory device and method of fabricating the same

A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

An organic electroluminescent display that can prevent decreases in an average luminance of an organic electroluminescent element thereof includes: a data line to supply a data signal; a scan line to supply a scan signal; a first switching element having a control electrode electrically coupled to the scan line, to transfer the data signal from the data line; a first driving transistor having a control electrode electrically coupled to the first switching element, to control a driving current of a first voltage line; a first capacitive element having a first electrode electrically coupled to the first voltage line and having a second electrode electrically coupled to a control electrode of the first driving transistor; an organic electroluminescent element, electrically coupled to the first driving transistor and a third voltage line, to display an image in response to a current supplied from the first driving transistor; and a second voltage line to supply a reverse bias voltage of a second voltage line to the organic electroluminescent element.

Organic electroluminescent display

An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.

Photo sensor and organic light-emitting display using the same

An organic light emitting display device including: a substrate having a pixel region and a non-pixel region; a first buffer layer and a second buffer layer formed over the substrate; a thin film transistor formed over the second buffer layer; an organic light emitting device formed in the pixel region and electrically connected with the thin film transistor; and a photo diode formed in the non-pixel region, for receiving external light of red wavelength at a certain absorption rate, and for controlling brightness of the organic light emitting device. Here, the first buffer layer can be formed to be from 2900 &#x212b; to 3100 &#x212b; in thickness, the second buffer layer can be formed to be from 200 &#x212b; to 400 &#x212b; in thickness, and the photo diode can include: an N-type doping region, a channel region being from 3 to 10 &#x3bc;m in width, and a P-type doping region.

Organic light-emitting display device including a photo diode

A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and realizing improved blocking function with an oxide film that is thinner by forming a first oxide film and a second oxide film including a silicon oxy-nitride (SiON) layer using nitrous oxide (NO) plasma. A fabricating method and a memory apparatus of the non-volatile memory device are also discussed.

Non-volatile memory device and fabrication method of non-volatile memory device and memory apparatus including non-volatile memory device

A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiON) layer using nitrous oxide (NO) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Non-volatile memory device and fabrication method thereof and memory apparatus including thereof

A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

Non-volatile memory device and fabrication method thereof

A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same

A thin film transistor (TFT) and a method of fabricating the same, in which a fabrication process is simplified and damage to a gate insulating layer is decreased. The method of fabricating the TFT includes forming at least one buffer layer on a substrate, forming a first semiconductor layer formed on the buffer layer and a second semiconductor layer by depositing a semiconductor doped with a dopant on the first semiconductor layer, patterning the second semiconductor layer to form source and drain regions, forming a gate insulating layer on the source and drain regions, and forming a gate electrode on the gate insulating layer.

Growing community of inventors

Suwon-si, South Korea

Byoung Deog Choi