Hyundai Motor Company

Electronics and Telecommunications Research Institute

Kia Motors Corporation

Kia Corporation

Korea Advanced Institute of Science and Technology

Ajou University Industry-academic Cooperation Foundation

Korea Research Institute of Bioscience and Biotechnology

Korea Research Institute of Standards and Science

Kolon Glotech, Inc.

Hanwha Compound Corporation

Byoung Chul Park

Seong Jae Lee

Moon Gyu Jang

Yark Yeon Kim

Myung Sim Jun

Chel Jong Choi

Jin Woo Lee

Seung Woo Choi

Min Jae Kim

Jin Ho Hwang

Min Ho Cho

Jong Sung Park

Mi Jung Yun

Jin Soo Han

Ji Ah Kim

Jeong Hoon Kim

Hong Mo Koo

Jeong Hee Moon

Hong Chan Jeon

Yong-Hyeon Yim

Hyoung Jun Lee

Dong Kyu Oh

Ji-Seon Oh

Kang Ho Cheon

Young Hwan Yoon

Eun Gook Kim

Seul Ah Lee

Sung Woo Heo

Sung Goo Park

Young Don Choi

In accordance with an embodiment, a noise reduction device includes a housing; and a slit located inside the housing and having a unit cell located therein, the unit cell comprising a sound absorbing layer configured to absorb noise generated from a sound source inside the housing, and a meta-material panel layer located on one surface of the sound absorbing layer, the meta-material panel layer comprising a sound meta-material.

Device for reducing noise using sound meta-material

Disclosed herein is a flat lighting apparatus having excellent flexibility and formability to be molded in various shapes as well as excellent optical properties such as brightness. The flat lighting apparatus according to present invention comprises a light guide plate for dispersing light and a reflector formed on a lower portion of the light guide plate to reflect light dispersed by the light guide plate. The reflector has a multi-layered structure including a first layer and a second layer.

Flat lighting apparatus and method for manufacturing the same

Disclosed are a backlight unit for planar lighting apparatuses and a manufacturing method thereof. The backlight unit simplifies a layer structure to be formed into the shape of a vehicle interior trim part, and has a thin thickness and improved flexibility. The backlight unit includes a light emitting device configured to emit light; a light guide panel having polycarbonate and configured to disperse the light received from a light emitting device; a reflective sheet having fibers and provided below the light guide panel to reflect the light dispersed by the light guide panel; and an acrylic adhesive sheet interposed between the light guide panel and the reflective sheet. The reflective sheet includes pores.

Backlight unit for planar lighting apparatuses with improved flexibility and manufacturing method thereof

Provided herein is a thermoplastic composite resin composition for shielding electromagnetic waves that may exhibit excellent mechanical properties and superior electromagnetic wave shielding performance without including a metal material.

Thermoplastic composite resin composition for shielding electromagnetic waves

A mass spectrometry device includes a sample seating part including an ultrasonic vibrator having a through hole through which liquid particles formed by the ultrasonic vibrator from an adsorbent material including a sample and a solvent are discharged, the adsorbent material being seated on the ultrasonic vibrator; a reaction part in which plasma or an ionization medium generated by plasma come into contact with the liquid particles discharged from the through hole to form an ionized material; an introduction part discharging and introducing the ionized material to a detection part; and the detection part analyzing the ionized material discharged from the introduction part. The mass spectrometry device and the mass spectrometry method can detect the components of various samples by converting a sample into liquid particles using ultrasonic waves and applying plasma and can detect samples in various fields without regard to locations.

Ionization mass spectrometry method and mass spectrometry device using same

Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

Method of manufacturing a Schottky barrier tunnel transistor

Schottky barrier tunnel transistor and method of manufacturing the same

Growing community of inventors

Daejeon, South Korea

Byoung Chul Park