Skhynix Inc.

Yonsei University

Byoung-Chan Oh

Seong-Ook Jung

Yoon-Jae Shin

Dong-Hoon Jung

Kyung-Ho Ryu

Jin-Hyuk Kim

Dong-Keun Kim

Provided is an electronic device including a power supply circuit. The power supply circuit includes: a voltage driving unit configured to pull-up drive an output node and generate an output voltage; and a driving control unit configured to receive the output voltage, disable the voltage driving unit from the time at which a divided voltage obtained by dividing the output voltage at a set ratio becomes higher than a first level, and enable the voltage driving unit from the time at which the divided voltage becomes lower than a second level, which is higher than the first level.

Electronic device and method for operating the same

A current comparator may include a current comparison block configured to compare current flowing through first and second input terminals; a first current control unit configured to control current flowing through the first input terminal in response to a voltage of a first node; a second current control unit configured to control current flowing through the second input terminal in response to a voltage of a second node; a first driving unit configured to drive the first node with a first voltage higher than a read voltage in a non-comparison period, and drive the first node with the read voltage in a comparison period; and a second driving unit configured to drive the second node with a second voltage higher than a reference voltage in the non-comparison period, and drive the second node with the reference voltage in the comparison period.

Current comparator and electronic device including the same

Provided an electronic device including a semiconductor memory unit. The semiconductor memory unit includes: a plurality of storage cells each including a variable resistance element of which resistance is changed in response to a current flowing across the variable resistance element and a selecting element coupled to one end of the variable resistance element; a plurality of word lines corresponding to the respective storage cells and each coupled to a selecting element of a corresponding storage cell; a first line coupled to one ends of the plurality of storage cells; a second line coupled to the other ends of the plurality of storage cells; a voltage adjuster configured to adjust the voltage levels of back bias voltages of the selecting elements of the plurality of storage cells; and an access control unit electrically coupled to the first and second lines and passing an access current to a selected storage cell among the plurality of storage cells.

Electronic device

A voltage converter includes a power supply circuit configured to generate an output voltage based on an input voltage in response to a control signal, and a power supply control circuit configured to generate the control signal based on a reference clock signal and the output voltage.

Voltage converter

An electronic device including a semiconductor memory. The semiconductor memory includes a plurality of variable resistance elements; a plurality of read voltage application terminals configured to supply different levels of read voltages to respective one ends of the plurality of variable resistance elements; and an analog-to-digital conversion unit configured to generate multi-bit digital data corresponding to a total current which is acquired by summing currents flowing through the plurality of variable resistance elements.

In an electronic device including a semiconductor memory, the semiconductor memory may include a unit storage cell including a variable resistor having a resistance value that is changed according to current flowing through both terminals of the variable resistor and a selection element that is electrically coupled to one terminal of the variable resistor, a unit current generation section that generates the current flowing through both terminals by using predetermined voltage according to a polarity of current data as compared with existing data, and a pad that receives the predetermined voltage from an exterior and allows the current flowing through both terminals to be measured from an exterior.

Variable resistance memory device and storage devices using the same

A delay locked loop includes a variable delay line circuit configured to delay a pulse selection circuit output to generate an output signal, a delay model circuit to delay the output signal to generate a first feedback signal, a first phase comparator circuit to control the variable delay line circuit according to the input signal and the first feedback signal, a pulse generation circuit to generate a pulse signal according to the input signal and the first feedback signal, a pulse retainer circuit to delay the output signal to generate a second feedback signal, a pulse selection circuit to select the pulse signal generated by the pulse generation circuit or the second feedback signal as the pulse selection circuit output during the tracking operation, and a second phase comparator circuit to control the variable delay line circuit according to the pulse selection circuit output and the output signal.

Growing community of inventors

Icheon-si, South Korea

Byoung-Chan Oh